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Built-in Potential of a Pentacene Pin Homojunction Studied by Ultraviolet Photoemission Spectroscopy

Published online by Cambridge University Press:  01 February 2011

Selina Olthof ,
Hans Kleemann ,
Björn Lüssem  and
Karl Leo
Selina Olthof
Affiliation:
[email protected], TU Dresden, IAPP, Dresden, Germany
Hans Kleemann
Affiliation:
[email protected], TU Dresden, IAPP, Dresden, Germany
Björn Lüssem
Affiliation:
[email protected], TU Dresden, IAPP, Dresden, Germany
Karl Leo
Affiliation:
[email protected], TU Dresden, IAPP, Dresden, Germany
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Abstract

In this paper we investigate the energetic alignment in an organic p-i-n homojunction using ultraviolet photoelectron spectroscopy. The device is made of pentacene and we emploay the small molecules NDN1 for n-doping and NDP2 for p-doping the layers. The full p-i-n structure is deposited stepwise on a silver substrate to learn about the interface dipoles and band bending effects present in the device. From the change in work function between the p- and n-doped layers we gain knowledge of the built-in potential of this junction.

Keywords

organicdopantphotoemission
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1270: Symposia GG/HH/II – Organic Photovoltaics and Related Electronics-From Excitons to Devices , 2010 , 1270-II09-49
Copyright
Copyright © Materials Research Society 2010

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References

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