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Breakdown in ALD-processed oxide based thin film structures

Published online by Cambridge University Press:  05 August 2013

Holger Spahr ,
Tim Bülow ,
Christine Nowak ,
Felix Hirschberg ,
Johannes Reinker ,
Sami Hamwi ,
Hans-Hermann Johannes  and
Wolfgang Kowalsky
Holger Spahr
Affiliation:
Technische Universität Braunschweig, Institut für Hochfrequenztechnik, Schleinitzstraße 22, 38106 Braunschweig, Germany
Tim Bülow
Affiliation:
Technische Universität Braunschweig, Institut für Hochfrequenztechnik, Schleinitzstraße 22, 38106 Braunschweig, Germany
Christine Nowak
Affiliation:
Technische Universität Braunschweig, Institut für Hochfrequenztechnik, Schleinitzstraße 22, 38106 Braunschweig, Germany
Felix Hirschberg
Affiliation:
Technische Universität Braunschweig, Institut für Hochfrequenztechnik, Schleinitzstraße 22, 38106 Braunschweig, Germany
Johannes Reinker
Affiliation:
Technische Universität Braunschweig, Institut für Hochfrequenztechnik, Schleinitzstraße 22, 38106 Braunschweig, Germany
Sami Hamwi
Affiliation:
Technische Universität Braunschweig, Institut für Hochfrequenztechnik, Schleinitzstraße 22, 38106 Braunschweig, Germany
Hans-Hermann Johannes
Affiliation:
Technische Universität Braunschweig, Institut für Hochfrequenztechnik, Schleinitzstraße 22, 38106 Braunschweig, Germany
Wolfgang Kowalsky
Affiliation:
Technische Universität Braunschweig, Institut für Hochfrequenztechnik, Schleinitzstraße 22, 38106 Braunschweig, Germany
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Abstract

We report on the continuous increase of the breakdown electric field, also known as disruptive strength, of an ultra thin layer based on Al2O3 prepared by atomic layer deposition (ALD) by reducing its thickness from 90 nm down to 3 nm. By calculating the disruptive strength for lower thicknesses, we demonstrate that our observations are in agreement with recent reports. Additionally, the disruptive strength increases to lower thicknesses as the pinhole density rises. The pinholes, referred to as morphological defects, are detected by Cu electroplating and result in a lower permittivity of the dielectric. As a conclusion, the dielectric breakdown is predominantly attributed to intrinsic, meaning stoichiometric defects. Thus, morphological defects, consisting of pinholes generated by agglomerative growth of the dielectric, surprisingly do not have a negative influence on the dielectric breakdown of ALD-processed ultra thin dielectric layers.

Keywords

atomic layer depositionoxidedefects
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1507: Symposium AA – Oxide Nanoelectronics and Multifunctional Dielectrics , 2013 , mrsf12-1507-aa09-02
Copyright
Copyright © Materials Research Society 2013 

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References

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