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Boron Enhanced H Diffusion in Amorphous Si Formed by Ion Implantation

Published online by Cambridge University Press:  01 February 2011

Brett Cameron Johnson ,
Armand J. Atanacio ,
Kathryn E. Prince  and
Jeffrey C. McCallum
Brett Cameron Johnson
Affiliation:
[email protected], University of Melbourne, School of Physics, Swanston Street, Melbourne, N/A, Australia
Armand J. Atanacio
Affiliation:
[email protected], Australian Nuclear Science & Technology Organisation, PMB 1, Menai, NSW, 2234, Australia
Kathryn E. Prince
Affiliation:
[email protected], Australian Nuclear Science & Technology Organisation, PMB 1, Menai, NSW, 2234, Australia
Jeffrey C. McCallum
Affiliation:
[email protected], University of Melbourne, School of Physics, Melbourne, 3010, Australia
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Abstract

Boron enhanced H diffusion in amorphous Si (a-Si) layers formed by ion implantation is observed using secondary ion mass spectroscopy (SIMS). Constant concentrations of B were achieved using multiple energy B implantations into thick a-Si layers. The evolution of single H implanted profiles centered on the uniformly B-implanted regions was studied for partial anneals at temperatures in the range 380 – 640 °C. Boron enhanced diffusion is observed and the enhanced diffusion coefficient shows trends with temperature typically associated with a Fermi level shifting dependence. A modified form of the generalized Fermi level shifting model is considered in light of these results.

Keywords

diffusionamorphousSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E05-05
Copyright
Copyright © Materials Research Society 2008

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References

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