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Bonding and Epitaxial Relationships at High-K Oxide:Si interfaces

Published online by Cambridge University Press:  01 February 2011

J Robertson  and
P W Peacock
J Robertson
Affiliation:
Engineering Department, Cambridge University, Cambridge CB2 1PZ, UK
P W Peacock
Affiliation:
Engineering Department, Cambridge University, Cambridge CB2 1PZ, UK
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Abstract

The bonding at interfaces of Si(100) with SrTiO3, LaAlO3 and HfO2 are considered using simple electron counting models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 786: Symposium E – Fundamentals of Novel Oxide/Semiconductor Interfaces , 2003 , E5.5
Copyright
Copyright © Materials Research Society 2004

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References

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