Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-02T18:51:03.273Z Has data issue: false hasContentIssue false
  • English
  • Français

Blue Room-Temperature Photoluminescence of AlN Films, Prepared by RF Magnetron Sputtering

Published online by Cambridge University Press:  21 March 2011

V. Ligatchev ,
S.F. Yoon ,
J. Ahn ,
Q. Zhang ,
Rusli ,
K. Chew  and
S. Zhgoon
V. Ligatchev
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
S.F. Yoon
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
J. Ahn
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
Q. Zhang
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
K. Chew
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
S. Zhgoon
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
Get access

Abstract

Photo luminescence (PL) signal from the aluminum nitride (AlN) films, excited by near UV (363.8 nm) laser has been measured at the room temperature. The AlN films are deposited by radio frequency (RF) sputtering of aluminum in argon-nitrogen-hydrogen gas mixture. Positions of the PL peaks maximums are influenced by the AlN preparation regimes. The analysis of the PL data is based on the results of the structural studies and electron spectrum investigations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 667: Symposium G – Luminescence and Luminescent Materials , 2001 , G5.11
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Akasaki, I. et al., GaN-based UV/blue light emitting devices, Inst. Phys. Conf. Series No. 129, Chapter 10, Int. Symp. GaAs and related compounds, (Karuizawa 1992), pp. 851–856.Google Scholar
2. Harris, J. H., Youngman, R. A., Photoluminescence and Cathodoluminescence of AlN, Properties of Group III Nitrides, ed. Edgar, J. H., (INSPEC, 1994) pp. 203–221.Google Scholar
3. Nakamura, S. et al., J. Appl. Phys., 76, 8189 (1994).Google Scholar
4. Nakamura, S. et al., Appl. Phys. Lett. 58, 2021 (1991).Google Scholar
5. Jie, Jang, Chen, Wanf, Kun, Tao et al., Appl. Phys. Lett., 62, 2790 (1993).Google Scholar
6. Kaya, K., Kanno, Y., Takahashi, H., Jpn. J. Appl. Phys. 35, 2782 (1996).Google Scholar
7. Saxler, A., Kung, P., Sun, C.J. et al., Appl. Phys. Lett., 64, 339 (1994).Google Scholar
8. Ligatchev, V., Yoon, S.F., Ahn, J., Zhang, Q., Rusli, Zhgoon, S., Chew, K.L., Diamond and related materials, 10, 1335 (2001).Google Scholar
9. Ligatchev, V., Yoon, S.F., Ahn, J., Zhang, Q., Rusli. Abstracts of COMMAD 2000, Melbourne, Australia, 6-8 December 2000, p.138.Google Scholar