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Beta Silicon Carbide Pn Junction Diodes

Published online by Cambridge University Press:  15 February 2011

J. C. Coleman ,
G. L. Harris  and
D. B. Poker
J. C. Coleman
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University Washington, DC 20059, [email protected]
G. L. Harris
Affiliation:
Materials Science Research Center of Excellence, School of Engineering, Howard University Washington, DC 20059, [email protected]
D. B. Poker
Affiliation:
Surface Modification and Characterization Research Facility Oak Ridge National Laboratory, Oak Ridge, TN 37381.
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Abstract

Beta silicon carbide (3C-SiC) diodes have been fabricated using ion implantation as the selective doping technique. Previous work on 3C-SiC diodes have exhibited properties such as low reverse breakdown voltages and high ideality factors. Also, 6H and 4H SiC diodes have been reported. This paper studies a different procedure to produce better 3C-SiC diodes for use in the electronics industry. Current versus voltage, capacitance versus voltage and temperature versus voltage tests were conducted on the devices.

Isolation between devices is a prominent concern when building integrated circuits. Proton bombardment is the preferred planar process for forming isolation regions in gallium arsenide (GaAs) due to the lack of a stable native oxide. Hydrogen and boron in GaAs have exhibited good electrical isolation between devices. This paper investigates using proton bombardment to form isolation regions in 3C-SiC. Cubic SiC samples are implanted with a variety of implant doses, ranging from 1 × 1014 to 1 × 1015 ions / cm2 , and implant energies ranging from 150 to 300 keV. Hall measurement tests were performed to study the characteristics of the implanted material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 207
Copyright
Copyright © Materials Research Society 1996

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