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Behavior Of Point Defects In CZ Silicon Crystal Growth-Formation Of Polyhedral Cavities And Oxidation-Induced Stacking Fault Nuclei
Published online by Cambridge University Press: 15 February 2011
Abstract
The origin of oxidation–induced stacking faults (OSF) and polyhedral cavities in as–grown Czochralski silicon (CZ–Si) crystals is discussed with comparison to the behavior of previously investigated grown–in oxide precipitates. The incorporation, diffusion and reaction in the vacancy, self–interstitial and oxygen ternary system are considered to discuss the origin of grown–in defects.
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- Copyright © Materials Research Society 1997
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