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Barrier Modification In Au/IIb Semiconducting Diamond Contacts

Published online by Cambridge University Press:  10 February 2011

M. Teklu  and
K. Das
M. Teklu
Affiliation:
Department of Electrical Engineering, Tuskegee University, Tuskegee, AL 36088.
K. Das
Affiliation:
Department of Electrical Engineering, Tuskegee University, Tuskegee, AL 36088.
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Abstract

Rectifying contacts on semiconducting type IIb diamond crystals are readily established with any conducting material system including elemental metals, highly doped semiconductors, silicides and carbides. However, for a given surface preparation using oxidizing wet chemicals and in the absence of a surface reaction, barrier heights are observed to be constant regardless of the metal work function. In this report it is demonstrated that an adjustment of the barrier height can be achieved by employing a premetallization low-dose low-energy ion-implantation step.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 151
Copyright
Copyright © Materials Research Society 1996

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References

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