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Atomistic Study of the Morphology of Graphene on Si and SiC Substrates

Published online by Cambridge University Press:  21 February 2012

S. Seto ,
N. Arai  and
K. Shintani
S. Seto
Affiliation:
Department of Mechanical Engineering and Intelligent Systems, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
N. Arai
Affiliation:
Department of Mechanical Engineering and Intelligent Systems, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
K. Shintani
Affiliation:
Department of Mechanical Engineering and Intelligent Systems, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
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Abstract

The morphology of graphene on Si and SiC substrates is investigated using molecular- dynamics simulation. The effects of the size and orientation of graphene on its roughness, distance from the substrate, and periodic structure are examined. The roughness and distance show the size dependency which agrees with the size dependency of the ratio of the periphery length of graphene to its area. It is found there are some cases in which the roughness of graphene can be suppressed.

Keywords

Cepitaxynanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1407: Symposium AA – Carbon Nanotubes, Graphene and Related Nanostructures , 2012 , mrsf11-1407-aa15-47
Copyright
Copyright © Materials Research Society 2012

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References

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