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Atomistic observation of electron irradiation-induced defects in CeO2

Published online by Cambridge University Press:  21 February 2013

Seiya Takaki ,
Tomokazu Yamamoto ,
Masanori Kutsuwada ,
Kazuhiro Yasuda  and
Syo Matsumura
Seiya Takaki
Affiliation:
Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan
Tomokazu Yamamoto
Affiliation:
Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan
Masanori Kutsuwada
Affiliation:
Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan
Kazuhiro Yasuda
Affiliation:
Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan
Syo Matsumura
Affiliation:
Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan
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Abstract

We have investigated the atomistic structure of radiation-induced defects in CeO2 formed under 200 keV electron irradiation. Dislocation loops on {111} habit planes are observed, and they grow accompanying strong strain-field. Atomic resolution scanning transmission electron microscopy (STEM) observations with high angle annular dark-field (HAADF) and annular bright-field (ABF) imaging techniques showed that no additional Ce layers are inserted at the position of the dislocation loop, and that strong distortion and expansion is induced around the dislocation loops. These results are discussed that dislocation loops formed under electron irradiation are non-stoichiometric defects consist of oxygen interstitials.

Keywords

Cedefectselectron irradiation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1514: Symposium HH – Advances in Materials for Nuclear Energy , 2013 , pp. 93 - 98
Copyright
Copyright © Materials Research Society 2013 

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References

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