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Atomic Scale Simulations of Arsenic Ion Implantation and Annealing in Silicon

Published online by Cambridge University Press:  21 February 2011

M.-J. Caturla ,
T. Díaz de la Rubia ,
M. Jaraiz  and
G.H. Gilmer
M.-J. Caturla
Affiliation:
Lawrence Livermore National Laboratory, L-268, Livermore, CA-94550
T. Díaz de la Rubia
Affiliation:
Lawrence Livermore National Laboratory, L-268, Livermore, CA-94550
M. Jaraiz
Affiliation:
Dept. E. y Electrónica, Universidad de Valladolid, Valladolid, Spain
G.H. Gilmer
Affiliation:
AT&T Bell Laboratories, Rm. 1E332, 600 Mountain Ave., Murray Hill, NJ-07974
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Abstract

We present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after l0ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 °C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 45
Copyright
Copyright © Materials Research Society 1996

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