Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-08T00:35:23.879Z Has data issue: false hasContentIssue false
  • English
  • Français

Atomic and Electronic Structure Analysis of Σ=3, 9 and 27 Boundary, and Multiple Junction in β-SiC

Published online by Cambridge University Press:  10 February 2011

K. Tanaka  and
M. Kohyama
K. Tanaka
Affiliation:
Department of Material Physics, Osaka National Research Institute, AIST, 1-8-31 Midorigaoka, Ikeda, Osaka, 563-8577, Japan, [email protected]
M. Kohyama
Affiliation:
Department of Material Physics, Osaka National Research Institute, AIST, 1-8-31 Midorigaoka, Ikeda, Osaka, 563-8577, Japan, [email protected]
Get access

Abstract

The atomic structures of σ=3, 9 and 27 boundaries, and multiple junctions in β-SiC were studied by high-resolution electron microscopy (HREM). Especially, the existence of the variety of structures of σ=3 incoherent twin boundaries and σ=27 boundary was shown by HREM. The structures of σ=3, 9 and 27 boundary were explained by structural unit models. Electron energy-loss spectroscopy (EELS) was used to investigate the electronic structure of grain boundaries. The spectra recorded from bulk, {111}σ=3 coherent twin boundary (CTB) and {1211}σ=3 incoherent twin boundary (ITB) did not show significant differences. Especially, the energy-loss corresponding to carbon 1s-to Φ* transition was not found. It indicates that C atoms exist at grain boundary on the similar condition of bulk

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 589 , 1999 , 341
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Ichinose, H., Tajima, Y., and Ishida, Y. in Grain Boundary Structure and Related Phenomena, (Supple. to Trans. of the Japan Institute of Metals, 27 Sendai, Japan 1986), p. 253–260.Google Scholar
2.Bourret, A., and Bacmann, J. J. in Grain Boundary Structure and Related Phenomena, (Supple. to Trans. of the Japan Institute of Metals, 27 Sendai, Japan 1986), p. 125–134.Google Scholar
3.Zhang, Y., Ichinose, H., Ishida, Y., Ito, K., and Nakanose, M. in Diamond for Electronic Application, edited by Dreifus, D. L., Collins, A., Humphreys, T., Das, K., and Pehrsson, P. E. (Mater. Res. Soc. Proc. 416, Pittsburgh, PA 1996), p. 355–360.Google Scholar
4.Tanaka, K., Kohyama, M., and Iwasa, M., Mad. Sci. Forum, 294–296, p. 187 (1999).Google Scholar
5.Kohyama, M., Matl. Sci. Forum, 207–209, p. 265 (1996).Google Scholar
6.Kohyama, M. and Tanaka, K., to be published.Google Scholar