Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-06T22:43:06.601Z Has data issue: false hasContentIssue false
  • English
  • Français

Application of Novel Epitaxy Techniques to the Growth of CrSi2

Published online by Cambridge University Press:  03 September 2012

R.W. Fathauer ,
T. George ,
E.W. Jones ,
W.T. Pike ,
K.T. Short ,
R.P. Vasquez ,
Alice E. White  and
B.J. Wilkens
R.W. Fathauer
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
T. George
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
E.W. Jones
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
W.T. Pike
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
K.T. Short
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave, Murray Hill, NJ 07974
R.P. Vasquez
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
Alice E. White
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave, Murray Hill, NJ 07974
B.J. Wilkens
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287
Get access

Abstract

CrSi2 is of technological interest because it is a silicon-based semiconductor with a small band gap. Due to the lack of success with conventional molecular beam epitaxy of CrSi2 on Si, growth on mesotaxy-produced template layers and allotaxy have been attempted. After removal of the Si capping layer, epitaxy of additional CrSi2 on template layers formed by mesotaxy was found to be possible. However, single-crystal continuous films were not obtained, due at least in part to the presence of a network of cracks in the starting template. Allotaxy of CrSi2 was found to allow the formation of large grains of CrSi2 embedded in a single-crystal Si matrix, but coalescence of these grains into a continuous layer was not achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 453
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fathauer, R.W., Grunthaner, P.J., Lin, T.L., Chang, K.T., and Mazur, J.H., in Heteroepitaxy on Silicon: Fundamentals. Structure. and Devices, edited by Choi, H.K., Hull, R., Ishiwara, H., and Nemanich, R.J. (Mater. Res. Soc. Proc. 116, Pittsburgh, PA, 1988) pp. 453–458.Google Scholar
2. Shiau, F.Y., Cheng, H.C., and Chen, L.J., Appl. Phys. Lett. 45, 524 (1984).CrossRefGoogle Scholar
3. Fathauer, R.W., Grunthaner, P.J., Lin, T.L., Chang, K.T., Mazur, J.H., and Jamieson, D.N., J. Vac. Sci. Technol. B, 708 (1988).Google Scholar
4. White, A.E., Short, K.T., and Eaglesham, D.J., Appl. Phys. Lett. 56, 1260 (1990).CrossRefGoogle Scholar
5. Dudda, Chr., Mantl, S., Deiker, Ch., Dolle, M., and Luth, H., Nuclear Instr. and Meth. in Phys.Res. B80, 764 (1993).Google Scholar
6. Long, R.G. and Mahan, J.E., Appl. Phys. Lett. 56, 1655 (1990).CrossRefGoogle Scholar
7. Mantl, S. and Bay, H.L., Appl. Phys. Lett. 61, 267 (1992).Google Scholar