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Anti-diffusion barriers for gold-based metallization to GaN

Published online by Cambridge University Press:  01 February 2011

Anna Piotrowska ,
Eliana Kaminska ,
Marek Guziewicz ,
Elzbieta Dynowska ,
Anna Stonert ,
Andrzej Turos ,
Stephan Figge ,
Roland Kröger  and
Detlef Hommel
Anna Piotrowska
Affiliation:
[email protected], Institute of Electron Technology, Poland
Eliana Kaminska
Affiliation:
[email protected], Institute of Electron Technology, Poland
Marek Guziewicz
Affiliation:
[email protected], Institute of Electron Technology, Poland
Elzbieta Dynowska
Affiliation:
[email protected], Institute of Physics, Polish Academy of Sciences, Poland
Anna Stonert
Affiliation:
[email protected], Soltan Institute for Nuclear Studies, Poland
Andrzej Turos
Affiliation:
[email protected], Institute of Electronic Materials Technology, Poland
Stephan Figge
Affiliation:
[email protected], University of Bremen, Germany
Roland Kröger
Affiliation:
[email protected], University of Bremen, Germany
Detlef Hommel
Affiliation:
[email protected], University of Bremen, Germany
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Abstract

We propose a new metallization scheme to p-GaN, where thin-film transition metal nitrides have been applied to improve thermal stability of gold-based metallization. In this metallization scheme the Pd/Au bilayer was used to form low-resistivity ohmic contact to p-GaN, while Ta-Si-N, Ti-Si-N, and Ti-W-N anti-diffusion barriers were used to protect contact metallization from interaction with Au overlayer. We present the details of optimization of process parameters of barrier layer fabrication and show that Ta0.34Si0.25Ni0.41 and Ti0.26Si0.0.17Ni0.57 thin films fabricated by reactive magnetron sputtering show excellent barrier properties under high temperature stress.

Keywords

barrier layertransmission electron microscopy (TEM)optoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF14-05
Copyright
Copyright © Materials Research Society 2006

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References

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