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Annealing Studies of Re Doped AlPdMn Quasicrystals

Published online by Cambridge University Press:  21 March 2011

Donny W. Winkler
Affiliation:
Department of Physics and Astronomy, Clemson University, Clemson, SC 29634
Terry M. Tritt
Affiliation:
Department of Physics and Astronomy, Clemson University, Clemson, SC 29634 Materials Science and Engineering Department, Clemson University, Clemson, SC 29634
Robert Gagnon
Affiliation:
Department of Physics and Astronomy, McGill University, Montreal, Canada
J. Strom-Olsen
Affiliation:
Department of Physics and Astronomy, McGill University, Montreal, Canada
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Abstract

Quasicrystals have properties associated with both crystalline and amorphous materials. These properties appear to be sensitive to both composition and annealing conditions. Therefore, it is important to investigate the influence of the microstructure on the electrical and thermal transport properties of quasicrystals. AlPdMn quasicrystal samples were prepared with various levels of Re substituted for the Mn (Al70Pd20Mn10−XReX) and then subjected to different annealing conditions. Electrical resistivity, thermopower and thermal conductivity were measured on each as grown and annealed sample over a broad range of temperature, 10 K < T < 300 K. The relationship between the electrical and thermal transport properties and microstructure will be presented and discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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