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The Annealing of Phosphorus-Ion-Implanted Copper Indium Disulfide by A Pulsed Electron Beam

Published online by Cambridge University Press:  26 February 2011

J. L. Lin ,
J. T. Lue ,
H. Y. Leng ,
M. H. Yang  and
H. L. Hwang
J. L. Lin
Affiliation:
Department of Electrical Engineering
J. T. Lue
Affiliation:
Department of Electrical Engineering
H. Y. Leng
Affiliation:
Department of Electrical Engineering
M. H. Yang
Affiliation:
Institute of Nuclear Science National Tsing Hua University Hsinchu, Taiwan 300, R.O.C.
H. L. Hwang
Affiliation:
Department of Electrical Engineering
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Abstract

Pulsed Electron beam annealing of phosphorus implanted CuInS2 has been found to be an efficient method in p-type doping of CuInS2. A sheet resistance as low as 10.1 Ω/‮, a sheet carrier concentration as high as l.0 ×1016 cm−2, and a hole mobility as high as 499 cm2 /V.s have been obtained. The irradiation energy density for the best doping condition was determined to be in the ranges between 11–13 J/cm2. Using Van der Pauw/Hall technique in conjunction with a chemical etching technique, the effective carrier concentration profiles have been determined with a maximum carrier concentration of ∼9×1019cm−3. Excellent p-n CuInS2 homojunctions have been fabricated by electron-beam pulse annealing with anideality factor of 1.75.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 431
Copyright
Copyright © Materials Research Society 1986

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