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Analytical Studies of the Capping Layer Effect on Aluminum Induced Crystallization of Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

Husam Abu-Safe ,
Abul-Khair M. Sajjadul-Islam ,
Hameed A. Naseem  and
William D. Brown
Husam Abu-Safe
Affiliation:
[email protected], University of Arkansas, Electrical Engineering, 1168 Cato Springs Road Apt. # 9, Fayetteville, AR, 72701, United States, 479-973-9289, 479-575-7967
Abul-Khair M. Sajjadul-Islam
Affiliation:
[email protected], University of Arkansas, Arkansas Photovoltaic Research Center, Department of Electrical Engineering, Fayetteville, AR, 72701, United States
Hameed A. Naseem
Affiliation:
[email protected], University of Arkansas, Arkansas Photovoltaic Research Center, Department of Electrical Engineering, Fayetteville, AR, 72701, United States
William D. Brown
Affiliation:
[email protected], University of Arkansas, Arkansas Photovoltaic Research Center, Department of Electrical Engineering, Fayetteville, AR, 72701, United States
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Abstract

The effect of capping layer on metal induced crystallization of amorphous silicon was studied. Three sets of samples were prepared in this study. All samples had the basic layer structure of amorphous silicon layer deposited on a glass substrate. This was followed by a thin aluminum layer deposition. The second and third sets, however, had a third layer of amorphous silicon with thicknesses of 20 and 50 nm, respectively. These layers were deposited on top of the aluminum. The samples were annealed at 400°C for 15, 30 and 45 minutes. The crystallization fraction in the resultant films was analyzed using X-Ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, and atomic force microscopy. It was observed that the capping layer reduces nodule formation improving the smoothness of the crystallized polysilicon films.

Keywords

amorphousSiAl
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A21-09
Copyright
Copyright © Materials Research Society 2006

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