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Analysis on the Characteristics of Low-k Benzo-Cyclo-Butene Passivation

Published online by Cambridge University Press:  11 February 2011

W. S. Sul ,
H. J. Han ,
H. S. Lee ,
B. H. Lee ,
S. D. Kim  and
J. K. Rhee
W. S. Sul
Affiliation:
Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul, 100–715, KoreaTel: +82–2–2260–3335, Fax : +82–2–2277–4796, E-mail : [email protected]
H. J. Han
Affiliation:
Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul, 100–715, KoreaTel: +82–2–2260–3335, Fax : +82–2–2277–4796, E-mail : [email protected]
H. S. Lee
Affiliation:
Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul, 100–715, KoreaTel: +82–2–2260–3335, Fax : +82–2–2277–4796, E-mail : [email protected]
B. H. Lee
Affiliation:
Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul, 100–715, KoreaTel: +82–2–2260–3335, Fax : +82–2–2277–4796, E-mail : [email protected]
S. D. Kim
Affiliation:
Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul, 100–715, KoreaTel: +82–2–2260–3335, Fax : +82–2–2277–4796, E-mail : [email protected]
J. K. Rhee
Affiliation:
Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul, 100–715, KoreaTel: +82–2–2260–3335, Fax : +82–2–2277–4796, E-mail : [email protected]
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Abstract

Surface passivation for the devices is very important for ensuring the DC and RF performances as well as the reliability in pseudomorphic high electron mobility transistors (PHEMT's). We performed the comparative study on the DC, RF and noise characteristics of the 0.1 μm gate length PHEMT's passivated by low dielectric constant benzo-cyclo-butene (BCB) layers with those passivated by the conventional Si3N4 or the. The noise performance of the BCB passivation for the PHEMT's was much superior to that of the Si3N4, whereas the DC and other RF properties were not significantly affected by the passivation materials.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 734: Symposia A/B – Defect-Mediated Phenomena in Ordered Polymers – Polymer/Metal Interfaces and Defect Mediated Phenomena in Ordered Polymers , 2002 , B9.23
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCE

[1] Garrou, P., Rogers, W., Scheck, D., Standjord, A., Ida, Y., and Ohba, K., 1999, IEEE Trans. Advanced Packaging, Vol. 22, No. 3.Google Scholar
[2] Walker, J. L. B., in High-Power GaAs FET Amplifier, (Artech House, 1993).Google Scholar
[3] Garrou, Philip E., Heistand, Robert H., Dibbs, Mitchell G., Mainal, Teresa A., Mohler, Carol E., Stokich, Theodore M., Townsend, Paul H., Adema, Gretchen M., Berry, Michell J., and Turlik, Iwona, 1993, Tansactions on Component, Hybrids, and Manufacturing Technology, Vol 16, No. 1.Google Scholar
[4] Chiu, Hsien-Chin, Hwu, Ming-Jyh, Yang, Shih-Cheng, and Chan, Yi-Jen, 2002, IEEE Electron Device Letters, Vol. 23, No. 5.Google Scholar