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Analysis and Optimization of Thin-Film Ferroelectric Phase Shifters

Published online by Cambridge University Press:  10 February 2011

R. R. Romanofsky ,
F. W. Van Keuls ,
J. D. Warner ,
C. H. Mueller ,
S. A. Alterovitz ,
F. A. Miranda  and
A. H. Qureshi
R. R. Romanofsky
Affiliation:
NASA Glenn Research Center, Cleveland OH 44135
F. W. Van Keuls
Affiliation:
Ohio Aerospace Institute, Cleveland OH 44142
J. D. Warner
Affiliation:
NASA Glenn Research Center, Cleveland OH 44135
C. H. Mueller
Affiliation:
NASA Glenn Research Center, Cleveland OH 44135
S. A. Alterovitz
Affiliation:
NASA Glenn Research Center, Cleveland OH 44135
F. A. Miranda
Affiliation:
NASA Glenn Research Center, Cleveland OH 44135
A. H. Qureshi
Affiliation:
Cleveland State University, Cleveland OH 44101
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Abstract

Microwave phase shifters have been fabricated from (YBa2Cu3 O7-δ or Au)/SrTiO3 and Au/BaxSr1−xTiO3 films on LaAlO3 and MgO substrates. These coupled microstrip devices rival the performance of their semiconductor counterparts at Ku- and K-band frequencies. Typical insertion loss for room temperature ferroelectric phase shifters at K-band is ≈5 dB. An experimental and theoretical investigation of these novel devices explains the role of the ferroelectric film in overall device performance. A roadmap to the development of a 3 dB insertion loss phase shifter that would enable a new type of phased array antenna is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 603: Symposium KK – Materials Issues for Tunable RF & Microwave Devices , 1999 , 3
Copyright
Copyright © Materials Research Society 2000

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