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Analysis and Applications of ZnO Semiconductor Films Deposited by Laser and Sputtering Techniques

Published online by Cambridge University Press:  01 February 2011

Tingfang Yen ,
Meiya Li ,
Nehal Chokshi ,
Sung Jin Kim ,
Alexander N. Cartwright ,
Yongwoo Jeong  and
Wayne A. Anderson
Tingfang Yen
Affiliation:
[email protected], SUNY-Buffalo, EE, 20 Durham Ct. Apt.A, Amherst, NY 14228, Amherst, NY, 14228, United States, 814-876-0995
Meiya Li
Affiliation:
[email protected], State University of New York at Buffalo, Electrical Enginnering, Buffalo, NY, 14260, United States
Nehal Chokshi
Affiliation:
[email protected], AMBP Tech Corporation, Piscataway, NJ, 08854, United States
Sung Jin Kim
Affiliation:
[email protected], State University of New York at Buffalo, Electrical Enginnering, Buffalo, NY, 14260, United States
Alexander N. Cartwright
Affiliation:
[email protected], State University of New York at Buffalo, Electrical Enginnering, Buffalo, NY, 14260, United States
Yongwoo Jeong
Affiliation:
[email protected], State University of New York at Buffalo, Electrical Enginnering, Buffalo, NY, 14260, United States
Wayne A. Anderson
Affiliation:
[email protected], State University of New York at Buffalo, Electrical Enginnering, Buffalo, NY, 14260, United States
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Abstract

In this paper, ZnO thin films deposited by two methods have been studied. Specifically, the films were grown using i) Laser Assisted Molecular Beam Deposition (LAMBD) and ii) RF sputtering. Subsequent to film deposition, a subset of samples deposited using LAMBD were laser annealed. An additional set of samples (from LAMBD and RF sputtering) were annealed with N2 or forming gas at 600°C for 30mins.

After deposition, optical and electrical properties of ZnO thin films have been studied. The application of ZnO to optical devices, including Metal-Semiconductor-Metal Photodetectors (MSM-PD) and solar cells, has been made. Several deposition experiments recently demonstrated that the thin films of RF-ZnO and LAMBD-ZnO have near ZnO parameters including refractive index close to 2, 1:1 stoichiometry ZnO, and 3.3 eV ZnO bandgap. Mixtures of single crystal and polycrystal grains were observed by Transmission Electron Microscopy (TEM) from LAMBD ZnO thin films. MSM current-voltage data show symmetrical photo current behavior. High ratio of photocurrent to dark current, good responsivity and fast pulse response of LAMBD-ZnO MSM were observed. ZnO/Si heterojunction solar cell result has been demonstrated and improvement in the ultraviolet light spectrum of spectral response has been shown in this paper.

Keywords

sputteringoxidedevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K10-05
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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