Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-02T18:51:46.822Z Has data issue: false hasContentIssue false

An Overview of Oxygen in Silicon

Published online by Cambridge University Press:  28 February 2011

J. C. Mikkelsen Jr.*
Affiliation:
Xerox Research, 3333 Coyote Hill Road, Palo Alto, CA 94304
Get access

Extract

Oxygen in silicon has been an important scientific and technological subject for over 30 years. It derives its technological importance from the fact that silicon crystals pulled from silica crucibles have been the standard substrates for fabrication of integrated circuits. The scientific interest originates both from support of this technology and the wide variety of phenomena that occur when cooled Czochralski (CZ) Si crystals become supersaturated with oxygen. Furthermore, the semiconducting nature of Si permits the use of very sensitive electrical and optical probes to complement the structural and chemical characterization of these varied solid state phenomena.

Type
Research Article
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)