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An Overview of FeRAM Technology for High Density Applications

Published online by Cambridge University Press:  21 March 2011

Nicolas Nagel ,
Thomas Mikolajick ,
Igor Kasko ,
Walter Hartner ,
Manfred Moert ,
Cay-Uwe Pinnow ,
Christine Dehm  and
Carlos Mazure
Nicolas Nagel
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
Thomas Mikolajick
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
Igor Kasko
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
Walter Hartner
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
Manfred Moert
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
Cay-Uwe Pinnow
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
Christine Dehm
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
Carlos Mazure
Affiliation:
Infineon Technologies, Memory Product Division Otto-Hahn Ring. 6, 81739 Munich, Germany
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Abstract

Ferroelectric random access memories (FeRAMs) are new types of memories especially suitable for mobile applications due to their unique properties such as nonvolatility, small DRAM - like cell size, fast read and write as well as low voltage / low power behavior. Although standard CMOS processes can be used for frontend and backend / metallization processes, FeRAM technology development has to overcome major challenges due to new materials used for capacitor formation. In this paper, advantages and disadvantages of different ferroelectric materials and major development issues for high density applications are discussed. Results of a 0.5μm ferroelectric process using SrBi2Ta2O9 (SBT) as ferroelectric layer, Pt as electrode material, and 2-layer tungsten / aluminum metallization are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC1.1.1
Copyright
Copyright © Materials Research Society 2001

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References

1. Jung, D.J., Jeon, B.G., Kim, H.H., Song, Y.J., Koo, B.J., Lee, S.Y., Park, S.O., Park, Y.W., and Kim, K., IEDM Technical Digest, 279 (1999)Google Scholar
2. Perera, A.H., Taylor, W.J., and Orlowski, M., IEDM Technical Digest, 835 (1993)Google Scholar
3. Moert, M., Schindler, G., Hartner, W., Kasko, I., Kastner, M., Mikolajick, T. Dehm, C., and Waser, R., to be published in Intergrated Ferroelectrics, Proc. 12th Int. Symp. Integrated Ferroelectrics (2000)Google Scholar
4. Ito, Y., Ushikubo, M., Yokoyama, S., Matsunaga, H., Atsuki, T., Yonezawa, T., and Ogi, K., Jpn. J. Appl. Phys. Vol.35, 4925 (1996)Google Scholar
5. Joshi, V., Solayappan, N., Celinska, J., McMillan, D., and Araujo, C.A., to be published in Intergrated Ferroelectrics, Proc. 12th Int. Symp. Integrated Ferroelectrics (2000)Google Scholar
6. Park, I.S., Kim, Y.K., Lee, S.M., Chung, J.H., Kang, S.B., Park, C.S., Yoo, C.Y., Lee, S.I., and Lee, M.Y., IEDM Technical Digest, 617 (1997)Google Scholar
7. Nakura, T., Mori, H., Inoue, N., Ikarashi, N., Takahashi, S., and Kasai, N., IEDM Technical Digest, 801 (1999)Google Scholar
8. Hartner, W., Schindler, G., Bosk, P., Gabric, Z., Kastner, M., Beitel, G., Mikolajick, T., Dehm, C., and Mazure, C., to be published in Intergrated Ferroelectrics, Proc. 12th Int. Symp. Integrated Ferroelectrics (2000)Google Scholar
9. Kudo, J., Ito, Y., Mitarai, S., Ogata, N., Yamazaki, S., Urashima, H., Okutoh, A., Nagata, M., and Ishihara, K., IEDM Technical Digest, 609 (1997)Google Scholar
10. Moise, T.S., Summerfelt, S.R., Xing, G., Colombo, L., Sakoda, T., Gilbert, S.R., Loke, A., Ma, S., Kavari, R., Wills, L.A., Hsu, T., Amano, J., Johnston, S.T., Vestyck, D.J., Russel, M.W., and Bilodeau, S.M., IEDM Technical Digest, 940 (1999)Google Scholar
11. Kim, K., Integrated Ferroelectrics, Vol. 25, 149 (1999)10.1080/10584589908210168Google Scholar
12. Onishi, S., Nagata, M., Mitarai, S., Ito, Y., Kudo, J., Sakiyama, K., Desu, S.B., Bhatt, H.D., Vijay, D.P., and Hwang, Y., J.Electrochem.Soc., Vol.145, No.7, 2563 (1998)Google Scholar
13. Dehm, C., Mikolajick, T., Schindler, G., Kasko, I., and Nagel, N., unpublished resultsGoogle Scholar