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An AlGaAs/InGaAs HEMT Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers

Published online by Cambridge University Press:  01 February 2011

Edward Chang ,
Yueh-Chin Lin ,
Yu-Lin Hsiao ,
Y.C. Hsieh ,
Chia-Yuan Chang ,
Chien-I Kuo  and
Guang-Li Luo
Edward Chang
Affiliation:
[email protected], National Chiao-Tung University, Department of Materials Science and Engineering, National Chiao-Tung University, Hsin-Chu 30050, Taiwan, R.O.C., Hsin-Chu, 30050, Taiwan, (886)-3-5131536, (886)-3-5751826
Yueh-Chin Lin
Affiliation:
[email protected], National Chiao-Tung University, Department of Materials Science and Engineering, 1001 Ta-Hsueh Rd., Hsin-Chu, 30010, Taiwan
Yu-Lin Hsiao
Affiliation:
[email protected], National Chiao-Tung University, Department of Materials Science and Engineering, 1001 Ta-Hsueh Rd., Hsin-Chu, 30010, Taiwan
Y.C. Hsieh
Affiliation:
[email protected], National Chiao-Tung University, Department of Materials Science and Engineering, 1001 Ta-Hsueh Rd., Hsin-Chu, 30010, Taiwan
Chia-Yuan Chang
Affiliation:
[email protected], National Chiao-Tung University, Department of Materials Science and Engineering, 1001 Ta-Hsueh Rd., Hsin-Chu, 30010, Taiwan
Chien-I Kuo
Affiliation:
[email protected], National Chiao-Tung University, Department of Materials Science and Engineering, 1001 Ta-Hsueh Rd., Hsin-Chu, 30010, Taiwan
Guang-Li Luo
Affiliation:
[email protected], National Nano Device Laboratories, No 26, Prosperity Road 1, Science-based Industrial Park, Hsin-Chu, 30078, Taiwan
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Abstract

An AlGaAs/InGaAs HEMT grown on Si substrate with Ge/GexSi1−x buffer is demonstrated. The Ge/GexSi1−x metamorphic buffer layer used in this structure was only 1.0 μgm thick. The electron mobility in the In0.18Ga0.82 As channel of the HEMT sample was 3,550 cm2/Vs. After fabrication, the HEMT device demonstrated a saturation current of 150 mA/mm and a maximum transconductance of 155 mS/mm. The well behaved characteristics of the HEMT device on the Si substrate are believed to be due to the very thin buffer layer achieved and the lack of the antiphase boundaries (APBs) formation and Ge diffusion into the GaAs layers.

Keywords

III-VdevicesGe
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C02-03
Copyright
Copyright © Materials Research Society 2008

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References

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