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Amorphous to Polycrystalline Transformation in High Dose Ion Implanted Silicon

Published online by Cambridge University Press:  26 February 2011

E. Nygren ,
J. C. Mccallum ,
R. Thornton ,
J. S. Williams  and
G. L. Olson
E. Nygren
Affiliation:
RMIT, Microelectronics Technology Centre, Melbourne 3000, Australia
J. C. Mccallum
Affiliation:
Melbourne University, School of Physics, Parkville 3052, Australia
R. Thornton
Affiliation:
RMIT, Microelectronics Technology Centre, Melbourne 3000, Australia
J. S. Williams
Affiliation:
RMIT, Microelectronics Technology Centre, Melbourne 3000, Australia
G. L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA, 90625, U.S.A.
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Abstract

The amorphous to polycrystalline transformation of silicon implanted with high doses of In, Bi, Ga, and Sn is investigated. Each of these elements forms a low temperature eutectic with crystalline silicon and the details of the phase transformations in these systems are found to be very similar. A general model for the transformation based on the nature of the binary solutions is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 405
Copyright
Copyright © Materials Research Society 1988

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References

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