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Amorphous silicon based betavoltaic devices

Published online by Cambridge University Press:  17 June 2013

N. Wyrsch
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), mb-microtec, Freiburgstrasse 634, 3172 Niederwangen, Switzerland.
Y. Riesen
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), mb-microtec, Freiburgstrasse 634, 3172 Niederwangen, Switzerland.
A. Franco
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), mb-microtec, Freiburgstrasse 634, 3172 Niederwangen, Switzerland.
S. Dunand
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), mb-microtec, Freiburgstrasse 634, 3172 Niederwangen, Switzerland.
H. Kind
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), mb-microtec, Freiburgstrasse 634, 3172 Niederwangen, Switzerland.
S. Schneider
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), mb-microtec, Freiburgstrasse 634, 3172 Niederwangen, Switzerland.
C. Ballif
Affiliation:
Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), mb-microtec, Freiburgstrasse 634, 3172 Niederwangen, Switzerland.
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Abstract

Hydrogenated amorphous silicon betavoltaic devices are studied both by simulation and experimentally. Devices exhibiting a power density of 0.1 μW/cm2 upon Tritium exposure were fabricated. However, a significant degradation of the performance is taking place, especially during the first hours of the exposure. The degradation behavior differs from sample to sample as well as from published results in the literature. Comparisons with degradation from beta particles suggest an effect of tritium rather than a creation of defects by beta particles.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

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