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Al-Oxynitride Buffer Layer Facilities for PrOX/SiC Interfaces

Published online by Cambridge University Press:  01 February 2011

Karsten Henkel ,
Rakesh Sohal ,
Carola Schwiertz ,
Yevgen Burkov ,
Mohamed Torche  and
Dieter Schmeißer
Karsten Henkel
Affiliation:
[email protected], BTU Cottbus, Angewandte Physik-Sensorik, K.-Wachsmann-Allee 17, Cottbus, 03046, Germany, 0049-(0)355-694069, 0049-(0)355-693931
Rakesh Sohal
Affiliation:
[email protected], BTU Cottbus, Angewandte Physik-Sensorik, K.-Wachsmann-Allee 17, Cottbus, 03046, Germany
Carola Schwiertz
Affiliation:
[email protected], BTU Cottbus, Angewandte Physik-Sensorik, K.-Wachsmann-Allee 17, Cottbus, 03046, Germany
Yevgen Burkov
Affiliation:
[email protected], BTU Cottbus, Angewandte Physik-Sensorik, K.-Wachsmann-Allee 17, Cottbus, 03046, Germany
Mohamed Torche
Affiliation:
[email protected], BTU Cottbus, Angewandte Physik-Sensorik, K.-Wachsmann-Allee 17, Cottbus, 03046, Germany
Dieter Schmeißer
Affiliation:
[email protected], BTU Cottbus, Angewandte Physik-Sensorik, K.-Wachsmann-Allee 17, Cottbus, 03046, Germany
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Abstract

We investigate the dielectric properties of Praseodymium based oxides and silicates by preparing MIS structures consisting of a metal layer (M), PrOX (praseodymium oxide) as a high-k insulating layer (I), and silicon (Si) or silicon carbide (SiC) as semiconductor substrates (S).

The use of a buffer layer between PrOX and SiC is necessary as we found destructive interactions like silicate and graphite formation between these materials. Based on a higher permittivity value than SiO2 and a good lattice matching in conjunction with nearly the same thermal expansion coefficient to SiC, we focus on aluminum oxynitride (AlON) as a suitable buffer layer for this high-k/wide-bandgapsystem. We report on results achieved by Synchrotron Radiation Photoemission Spectroscopy (SRPES) and by electrical measurements.

In our spectroscopic investigations we found a stable AlON/3C-SiC interface as well as no elemental carbon and silicate contributions in the core levels after thin PrOX deposition and annealing up to 900°C.

In electrical characterizations of PrOX/AlON stacks on silicon we already found a strong improvement in the leakage current down to values of 10-7 A/cm2 at an CET of 4nm. We observed an interface state density in the range of 5x1011-1x1012/eVcm2 and 1-5x1012/eVcm2 on Si and SiC, respectively.

Keywords

Prdielectric propertiesx-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 996: Symposium H – Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies , 2007 , 0996-H05-23
Copyright
Copyright © Materials Research Society 2007

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