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Aligned-Crystalline Si Films on Glass

Published online by Cambridge University Press:  01 February 2011

Alp T. Findikoglu ,
Ozan Ugurlu  and
Terry G. Holesinger
Alp T. Findikoglu
Affiliation:
[email protected], Los Alamos National Laboratory, MPA-STC, MS T004, Los Alamos, NM, 87544, United States
Ozan Ugurlu
Affiliation:
[email protected], Los Alamos National Laboratory, MPA-STC, MS K763, Los Alamos, NM, 87544, United States
Terry G. Holesinger
Affiliation:
[email protected], Los Alamos National Laboratory, MPA-STC, MS K763, Los Alamos, NM, 87544, United States
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Abstract

We report structural and electronic properties of Aligned-Crystalline Si (ACSi) films on glass substrates. These films show enhanced majority carrier mobilities and minority carrier lifetimes with increasing crystallinity, i.e., with improving alignment and connectivity of the grains. A 0.4-μm-thick ACSi film with a total grain mosaic spread of 4.2° showed Hall mobility of 47 cm2/V.s for a p-type doping concentration of 1.9×1018 cm−3. A prototype n+/p/p+–type diode fabricated using a 4.2-μm-thick ACSi film showed minority carrier lifetime of ∼3.5 μs and estimated diffusion length of ∼30 μm in the p layer with a doping concentration of 5×1016 cm−3.

Keywords

Siion-beam assisted depositionepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A20-04
Copyright
Copyright © Materials Research Society 2008

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References

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