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AlGaN/GaN Structures Grown by HVPE: Growth and Characterization

Published online by Cambridge University Press:  01 February 2011

M.A. Mastro ,
D.V. Tsvetkov ,
A.I. Pechnikov ,
V.A. Soukhoveev ,
G.H. Gainer ,
A. Usikov ,
V. Dmitriev ,
B. Luo ,
F. Ren  and
K.H. Baik
...Show all authors
M.A. Mastro
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, U.S.A.
D.V. Tsvetkov
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, U.S.A.
A.I. Pechnikov
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, U.S.A.
V.A. Soukhoveev
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, U.S.A.
G.H. Gainer
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, U.S.A.
A. Usikov
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, U.S.A.
V. Dmitriev
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, U.S.A.
B. Luo
Affiliation:
Department of Materials Science and Engineering; University of Florida, Gainesville, FL 32611, U.S.A.
F. Ren
Affiliation:
Department of Materials Science and Engineering; University of Florida, Gainesville, FL 32611, U.S.A.
K.H. Baik
Affiliation:
Department of Chemical Engineering; University of Florida, Gainesville, FL 32611, U.S.A.
S.J. Pearton
Affiliation:
Department of Chemical Engineering; University of Florida, Gainesville, FL 32611, U.S.A.
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Abstract

This letter reports on multi-layer submicron epitaxial device structures grown by hydride vapor phase epitaxy (HVPE). This is the first demonstration of both high electron mobility transistor (HEMT) devices and ultraviolet light emitting diodes (LED) emitting in the wavelength range from 305 to 340 nm based on AlGaN/GaN and AlGaN/AlGaN heterostructures grown by HVPE. Two unique aspects of this technological approach are the growth of Al-containing epitaxial material by HVPE and use of HVPE to form submicron multi-layer epitaxial structures. The high performance of HVPE grown devices presented in this report demonstrates the significant potential that exists for HVPE growth technology for mass production of device epitaxial wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C2.2
Copyright
Copyright © Materials Research Society 2003

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References

1. Melnik, D. Tsvetkov Yu., Davydov, A., Shapiro, A., Kovalenkov, O., Lam, J.B., Song, J.J., and Dmitriev, V., Phys. Stat. Sol. (a) 188, 429 (2001).Google Scholar
2. Fomin, A., Nikolaev, A., Nikitina, I., Zubrilov, A., Mynbaeva, M., Kuznetsov, N., Kovarsky, A., Ber, B., Tsvetkov, D., Phys. Stat. Sol. 188-1, 433 (2001).Google Scholar
3. Polyakov, A., Govorkov, A., Smirnov, N., Nikolaev, A., Nikitina, I., Dmitirev, V., Solid State Elec., 45, 249 (2001).Google Scholar
4. Nikolaev, A., Melnik, Y., Kuznetsov, N., Strelchuk, A., Kovarsky, A., Vassilevski, K., Dmitriev, V., Mat. Res. Soc. Symp. Proc. 482, 251 (1998)Google Scholar
5. Melnik, Y. V., Vassilevski, K. V., Nikitina, I. P., Babanin, A. I., Davydov, Y. and Dmitriev, V.A., MRS Technol J. Nitride Semicond. Res. 2, 39 (1997)Google Scholar
6. Luo, B., Johnson, J. W., Kim, J., Mehandru, R. M., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Baca, A. G., Briggs, R. D., Shul, R. J., Monier, C. and Han, J., Appl. Phys. Lett. 80, 1661 (2002).Google Scholar
7. Korotkov, R.Y., Gregie, J.M., Wesels, B.W., Appl. Phys. Lett., 78, 222 (2001).Google Scholar
8. Metzger, T., Hopler, R., Born, E., Ambacher, O., Stutzmann, M., Stommer, R., Schuster, M., Gobel, H., Christiansen, S., Albrecht, M., Strunk, H. P., Philos. Mag. A 77, 1013 (1998).Google Scholar
9. Lafford, T.A., Parbrook, P.J., Tanner, B.K.., Proceedings of the International Workshop on Nitride Semiconductors, Aachen, Germany, phys. stat. sol. (c) 0, 542 (2002).Google Scholar
10. Wang, Hong-Mei, Zhang, Jian-Ping, Chen, Chang-Qing, Fareed, Q., Yang, Jin-Wei, Khan, M. Asif, Appl. Phys. Lett., 81, 604 (2002).Google Scholar
11. Demchuk, A. et al., Proceedings of the MRS 2002 Fall Meeting, Boston, USA, 2-6 December, MRS Symp.Proc. 743, L.9.4.1. (2003).Google Scholar
12. Heinke, H., Kirchner, V., Einfeldt, S., Hommel, D., Appl. Phys. Lett., 77, 2145 (2000).Google Scholar
13. Mastro, M. A., Dmitriev, V., Luo, B., Ren, F., Baik, K. H. and Pearton, S. J., In Press, J. Elec. Mat., May (2003)Google Scholar