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The Adsorption-Desorption of Cations at the Silica-Water its Implication in Wafer-Cleaning Efficacy

Published online by Cambridge University Press:  10 February 2011

W. Lee ,
K. J. Torek ,
D. A. Palsulich  and
L. Weston
W. Lee
Affiliation:
Micron Technology, Inc., 8000 S. Federal Way, MS 306, P.O. Box 6 Boise, ID 83707-0006, [email protected]
K. J. Torek
Affiliation:
Micron Technology, Inc., 8000 S. Federal Way, MS 306, P.O. Box 6 Boise, ID 83707-0006, [email protected]
D. A. Palsulich
Affiliation:
Micron Technology, Inc., 8000 S. Federal Way, MS 306, P.O. Box 6 Boise, ID 83707-0006, [email protected]
L. Weston
Affiliation:
Micron Technology, Inc., 8000 S. Federal Way, MS 306, P.O. Box 6 Boise, ID 83707-0006, [email protected]
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Abstract

The adsorption-desorption of various cations at the silica-water interface is discussed in terms of electrical double layer and surface complexation models. Some experimentally determined surface equilibria constants from the literature are tabulated for Fe, Cu, and Mg. The adsorption phenomena of those cations onto silica gel is described using the stability calculation (STABCAL) computer program based on the suggested models.

A chemical oxide (silica) is grown on the silicon surface during the SC1 and/or SC2 processes. Adsorption of Fe, Cu, and Mg onto this chemical oxide is studied as a function of pH and compared to the modeling results. In general, there is a qualitative correlation between the experimental and modeling data, which can be used as a basis to develop a quantitative model for cation adsorption-desorption on the wafer surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 57
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Morinaga, H. and Ohmi, T. in Cleaning Technology in Semiconductor Device Manufacturing IV, edited by Novak, R. E. and Ruzyllo, J. (Mater. Res. Soc. Proc. 95–20, Pittsburgh, PA, 1996) pp. 257–268.Google Scholar
2. Takahara, Y, Saito, A., and Oka, H. in Cleaning Technology in Semiconductor Device Manufacturing IV, edited by Novak, R. E. and Ruzyllo, J. (Mater. Res. Soc. Proc. 95–20, Pittsburgh, PA, 1996) pp. 257–268.Google Scholar
3. Hurd, T. Q., Schmidt, H. F., Rotondaro, A. L. P., Mertens, P. W., Hall, L. H., and Heyns, M. M. in Cleaning Technology in Semiconductor Device Manufacturing IV, edited by Novak, R. E. and Ruzyllo, J. (Mater. Res. Soc. Proc. 95–20, Pittsburgh, PA, 1996) pp. 257–268.Google Scholar
4. Schindler, P. W., Furst, B., Dick, R., and Wolf, P. U., I. Colloid Interface Sci. 55, 469 (1976).CrossRefGoogle Scholar
5. Gisler, A., Ph.D. thesis, University of Bern, 1980.Google Scholar
6. Huang, H. H., STABCAL, University of Montana, 1995.Google Scholar
7. Overbeek, J. Th. G., Electrochemistry of the Double Layer, edited by Krugt, H. R. (Elsevier Science Publishers, Amsterdam, 1952), pp. 115–146.Google Scholar
8. Huang, C. P. and Stumm, W., Colloid, J. Interface Sci. 43, 409 (1973).10.1016/0021-9797(73)90387-1CrossRefGoogle Scholar
9. Stumm, W. and Morgan, J. J., Aquatic Chemistry, 3rd ed. (John Wiley and Sons, New York, 1996) pp. 263–271.Google Scholar
10. Hiemstra, T., Dewit, J. C. M., and Van Riemsterface, W. H., J. Colloid Interface Sci. 133, 105, 1989.CrossRefGoogle Scholar