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Ablation Free Dicing of 4H-SiC Wafers with Feed Rates up to 200 mm/s by Using Thermal Laser Separation

Published online by Cambridge University Press:  25 May 2012

Dirk Lewke ,
Matthias Koitzsch ,
Martin Schellenberger ,
Lothar Pfitzner ,
Heiner Ryssel  and
Hans-Ulrich Zühlke
Dirk Lewke
Affiliation:
Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen
Matthias Koitzsch
Affiliation:
Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen
Martin Schellenberger
Affiliation:
Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen
Lothar Pfitzner
Affiliation:
Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen
Heiner Ryssel
Affiliation:
Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen
Hans-Ulrich Zühlke
Affiliation:
JENOPTIK Automatisierungstechnik GmbH, Jena
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Abstract

This paper presents Thermal Laser Separation (TLS) as a novel dicing technology for silicon carbide (SiC) wafers. Results of this work will play an important role in improving the SiC dicing process regarding throughput and edge quality. TLS process parameters were developed for separating 4H-SiC wafers. Separated SiC dies were analyzed and compared with results produced with current state of the art blade dicing technology. For the first time, fully processed 100 mm 4H-SiC wafers with a thickness of 450 μm, including epi-layer and back side metal layers, could be separated with feed rates up to 200 mm/s. Besides the vastly improved dicing speed, the TLS separation process results in two important features of the separated SiC devices: First, edges are free of chipping and therefore of higher quality than the edges produced by blade dicing. Second, the TLS process is kerf free, which allows for reducing the necessary dicing street width and hence increasing the number of devices per wafer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1433: Symposium H – Silicon Carbide 2012—Materials, Processing and Devices , 2012 , mrss12-1433-h05-02
Copyright
Copyright © Materials Research Society 2012

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References

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