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A1Bi3C6 Thin Films as NO Sensors

Published online by Cambridge University Press:  01 February 2011

Halyna Khlyap ,
Violetta Bilozertseva ,
Nina Dyakonenko ,
Dmitrii Gaman ,
Andrey Mamalui  and
Hayna M. Khlyap
Halyna Khlyap
Affiliation:
[email protected], University, Physics, Disteldtr.11, Kaiserslautern, Rheinland-Pfalz, D-67657, Germany, +49 631 340 4772, -
Violetta Bilozertseva
Affiliation:
[email protected], Polytechnical University, Kharkov, -, UA-61661, Ukraine
Nina Dyakonenko
Affiliation:
[email protected], Polytechnical University, Kharkov, -, UA-61661, Ukraine
Dmitrii Gaman
Affiliation:
[email protected], Polytechnical University, Kharkov, UA-61661, Ukraine
Andrey Mamalui
Affiliation:
[email protected], PolytechnicalUniversity, Kharkov, -, UA-61661, Ukraine
Hayna M. Khlyap
Affiliation:
[email protected], University, Physics, E.-Schroedinger-Str. 56, Kaiserslautern, N/A, 67663, Germany
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Abstract

The paper reports experimental data on growth, morphology, NO sensitivity and electrophysical properties of A1Bi3C6 thin films obtained by means of simple vacuum technology. The investigated samples were condensed onto the glass substrates under deposition rate 0.1-0.5 nm/s at T = 300 K and vacuum level P = 10-3 Pa. AFM investigations of the film surface before and after interaction with aggressive environment demonstrated sufficient sensitivity of the film relief to the aggressive component. Room-temperature electric field-induced characteristics were investigated for metal-semiconductor (MS) Cr/NaBiTe2 structures.

Keywords

devicesfilmsensor
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 915: Symposium R – Nanostructured Materials and Hybrid Composites for Gas Sensors and Biomedical Applications , 2006 , 0915-R06-03
Copyright
Copyright © Materials Research Society 2006

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References

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