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5MeV Si Ion Modification on Thermoelectric SiO2/SiO2+Cu Multilayer Films

Published online by Cambridge University Press:  31 August 2011

C. Smith ,
S. Budak ,
T. Jordan ,
J. Chacha ,
B. Chhay ,
K. Heidary ,
R. B. Johnson ,
C. Muntele  and
D. ILA
C. Smith*
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL USA
S. Budak
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL USA
T. Jordan
Affiliation:
Department of Electrical Engineering, Alabama A&M University, Normal, AL USA
J. Chacha
Affiliation:
Department of Electrical Engineering, Alabama A&M University, Normal, AL USA
B. Chhay
Affiliation:
Department of Physics, Alabama A&M University, Normal, AL USA
K. Heidary
Affiliation:
Department of Electrical Engineering, Alabama A&M University, Normal, AL USA
R. B. Johnson
Affiliation:
Department of Physics, Alabama A&M University, Normal, AL USA
C. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL USA
D. ILA
Affiliation:
Department of Physics, Fayetteville St. University, Fayetteville, NC USA
*
*Corresponding author: C. Smith; Tel.: 256-372-5866; Fax: 256-372-5855; Email: [email protected]
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Abstract

We prepared samples by electron beam physical vapor deposition EB-PVD followed by ion bombardment. The samples were than characterized by photoluminescence (PL), x-ray photoelectron spectroscopy (XPS). PL was used to characterize the available energy states. XPS was used to determine the binding energies. The ML’s are comprised of 100 alternating layers of SiO2/SiO2+Cu.

Keywords

ion-beam processingnanostructureoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1354: Symposium II – Ion Beams—New Applications from Mesoscale to Nanoscale , 2011 , mrss11-1354-ii07-01
Copyright
Copyright © Materials Research Society 2011

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