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1MeV electron irradiation effects of GaAs/Si solar cells

Published online by Cambridge University Press:  01 February 2011

N. Chandrasekaran ,
T. Soga ,
Y. Inuzuka ,
M. Imaizumi ,
H. Taguchi  and
T. Jimbo
N. Chandrasekaran
Affiliation:
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466–8555, Japan.
T. Soga
Affiliation:
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466–8555, Japan.
Y. Inuzuka
Affiliation:
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466–8555, Japan.
M. Imaizumi
Affiliation:
Japan Aerospace Exploration Agency, Tsukuba, 305–8505, Japan.
H. Taguchi
Affiliation:
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466–8555, Japan.
T. Jimbo
Affiliation:
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466–8555, Japan.
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Abstract

The characteristics of 1 MeV electron irradiated GaAs solar cells grown on GaAs and Si substrates are studied under dark and AM 0 conditions. The short circuit currents (Isc) for GaAs/GaAs cell and GaAs/Si cell have been decreased at higher fluences. The degradation rate of Voc and Pmax for GaAs/Si is slower than that of GaAs/GaAs at the fluence 1×1016 cm−2. This is due to the high radiation resistance of saturation current. It has been due to slow generation of arsnic vacancies related defect (VAs) in the GaAs/Si solar cell, which is determined by photoluminescence analyses and deep level transient spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L6.7
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

[1] Knechtli, , Loo, R. Y., and Kamath, G. S., IEEE Trans. Electron Dev. ED–31, 577(1984).Google Scholar
[2] Soga, T., Baskar, K., Kato, T., Jimbo, T., and Umeno, M., J. Cryst. Growth 174, (1997) 579.Google Scholar
[3] Yamaguchi, M.: J. Mater. Res. 6(1991) 376.Google Scholar
[4] Imaizumi, M‥, Matsuda, S., Yamaguchi, M., and Ohara, T., Proc., 28 th IEEE Photovoltaic Specialists Conference, Sep 2000, Anchorage, USA. P.776.Google Scholar
[5] Itoh, Y., Yamaguchi, M., Nishioka, T. and Yamamoto, A. J. Appl. Phys., 61 (1987) 762.Google Scholar
[6] Bourgoin, J. C, von Bardeleben, H. J, J. Appl Phys 64, (1988) R65-R91.Google Scholar
[7] Goswami, N.G., Newman, R.C, and Whitehouse, J.E. Solid State Communications, vol. 40, (1981) 473.Google Scholar
[8] Mattile, T. and Nieminen, R. M., Phys. Rev lett., 74, (1995) 2721.Google Scholar
[9] Soga, T., Chandrasekaran, N., Imaizumi, M., Inuzuka, Y., Taguchi, H., Jimbo, T. and Matsuda, S.. Jpn. J. Appl. Phys. 42 (2003) 1054.Google Scholar
[10] Akiyama, M., Kawarada, Y. and Kaminishi, K., J. Crystal Growth 68 (1984) 21.Google Scholar
[11] Sze, S.M., Semiconductor Devices: physics and Technology. John Willey & sons USA (2002).Google Scholar
[12] Look, D. C. and Sizlove, J. R., J. Appl. Phys 62, (1987) 3660.Google Scholar
[13] Martin, G. M., Mintonneau, A., and Mircea, A., Electron Lett. 13, (1977) 191.Google Scholar
[14] Stievnard, D., Bboddaert, X., Bourgoin, J. C., Bardeleben, H. J., Phycal Review B, 41, (1990) 5271.Google Scholar
[15] Yousefi, H., Webb, J. B., Rousin, R., Kanna, S. M.. J. Electron Mater. 24, (1995) 15.Google Scholar
[16] Kim, E. K, cho, H.Y., Kim, Y., Kim, M.S., Kim, H.S. and Min, S.k, J. Appl. Phy′s. 67, (1990) 2554.Google Scholar
[17] Huang, Y., Yu, P. Y., Lee, H. and Wang, S. Appl. Phys. Lett., 52, 579 (1988)Google Scholar
[18] Khanna, S. M., Houdayer, A., Jorio, A., Carlone, C., Parenteasu, M., and Gerdes, J. W. Jr, IEEE Trans. Nucl. Sci. 43, (1996) 2601.Google Scholar