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1.8 kV, 10 mOhm-cm2 4H-SiC JFETs

Published online by Cambridge University Press:  01 February 2011

James D. Scofield ,
Sei-Hyung Ryu ,
Sumi Krishnaswami ,
Husna Fatima  and
Anant Agarwal
James D. Scofield
Affiliation:
[email protected], Air Force Research Laboratory, AFRL/PRPE, 1950 Fifth St, WPAFB, OH, 45433, United States, 937-255-5949
Sei-Hyung Ryu
Affiliation:
[email protected], CREE, Inc, Advanced Devices, 4600 Silicon Dr, Durham, NC, 27703, United States
Sumi Krishnaswami
Affiliation:
[email protected], CREE, Inc, Advanced Devices, 4600 Silicon Dr, Durham, NC, 27703, United States
Husna Fatima
Affiliation:
[email protected], CREE, Inc, Advanced Devices, 4600 Silicon Dr, Durham, NC, 27703, United States
Anant Agarwal
Affiliation:
[email protected], CREE, Inc, Advanced Devices, 4600 Silicon Dr, Durham, NC, 27703, United States
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Abstract

Fabrication and characteristics of high voltage, normally-on JFETs in 4H-SiC are presented. The devices were built on 5x1015 cm-3 doped, 12 μm thick n-type epilayer grown on a n+ 4H-SiC substrate. A specific on-resistance of 10 m Ω-cm2 and a blocking voltage of 1.8 kV were measured. Device characteristics were measured for temperatures up to 300oC. An increase of specific on-resistance by a factor of 5 and a decrease in transconductance were observed at 300oC, when compared to the value at room temperature. This is due to a decrease in bulk electron mobility at elevated temperature. A slight negative shift in pinch-off voltage was also observed at 300oC. The devices demonstrated robust DC characteristics for temperatures up to 300oC, and stable high temperature inverter operation in a power DC-DC converter application, using these devices, is reported in this paper.

Keywords

devicessemiconductingelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B12-02
Copyright
Copyright © Materials Research Society 2006

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References

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