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Ablation-Induced Stresses in Fused Silica by 157-nm F2-Laser irradiation

Published online by Cambridge University Press:  10 February 2011

Igor A. Konovalov
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON, Canada, M5S 3G4
Peter R. Herman
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON, Canada, M5S 3G4
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Abstract

The F2laser is a promising source for direct etching of microstructures and the precise shaping of optical-grade surfaces on wide bandgap materials such as fused silica. We report here on residual tensile stresses induced in fused silica (Coming 7940, UV grade) by 157-nm laser ablation. Plastic strain of 160-mm thick rectangular strips, monitored with an optical interferometric microscope, revealed the presence of residual tensile stresses in the near-ablated surface. HF chemical thinning of the sample showed the thickness of ablation-affected layer provoking strain was ∼275 nm, a value independent of laser fluence (1.9-4.7 J/cm2) and scanning speed (94 - 220 µm/s). A near-surface mean residual tensile stress of ∼80 MPa was inferred from a thin film-substrate approximation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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