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Ab-Initio Modeling of C-B Interactions In Si

Published online by Cambridge University Press:  21 March 2011

Chun-Li Liu ,
Wolfgang Windl ,
Len Borucki ,
Shifeng Lu  and
Xiang-Yang Liu
Chun-Li Liu
Affiliation:
Advanced Process Development and External Research Lab., Motorola
Wolfgang Windl
Affiliation:
Advanced Process Development and External Research Lab., Motorola
Len Borucki
Affiliation:
Advanced Process Development and External Research Lab., Motorola
Shifeng Lu
Affiliation:
Process and Materials Characterization Laboratory, Motorola
Xiang-Yang Liu
Affiliation:
Physical Sciences Research Laboratory, Motorola
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Abstract

We present the results of ab-initio calculations for the structure and energetics of small boron-carbon (BCI) as well as carbon-carbon (C2I) clusters in Si, a continuum model for the nucleation, growth, and dissolution of the clusters, and experimental investigation by SIMS. The modeling results suggest that these clusters may play a role in controlling B diffusion in Si and SiGe systems and the experimental results seem to support the modeling findings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 669: Symposium J – Si Front-End Processing–Physics and Technology of Dopant-Defect Interactions III , 2001 , J4.6
Copyright
Copyright © Materials Research Society 2001

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References

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