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950V, 8.7mohm-cm2 High Speed 4H-SiC Power DMOSFETs

Published online by Cambridge University Press:  01 February 2011

Sei-Hyung Ryu ,
Charlotte Jonas ,
Bradley Heath ,
James Richmond ,
Anant Agarwal  and
John Palmour
Sei-Hyung Ryu
Affiliation:
[email protected], Cree, Inc, SiC Power Devices, 4600 Silicon Drive, Durham, NC, 27703, United States, 919-313-5541
Charlotte Jonas
Affiliation:
[email protected], Cree, Inc, Durham, NC, 27703, United States
Bradley Heath
Affiliation:
[email protected], Cree, Inc, Durham, NC, 27703, United States
James Richmond
Affiliation:
[email protected], Cree, Inc, Durham, NC, 27703, United States
Anant Agarwal
Affiliation:
[email protected], Cree, Inc, Durham, NC, 27703, United States
John Palmour
Affiliation:
[email protected], Cree, Inc, Durham, NC, 27703, United States
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Abstract

Fabrication and characteristics of high voltage, high speed DMOSFETs in 4H-SiC are presented. The devices were built on 1.2×1016 cm-3 doped, 6 mm thick n-type epilayer grown on a n+ 4H-SiC substrate. A specific on-resistance of 8.7 mW-cm2 and a blocking voltage of 950 V were measured. Device characteristics were measured for temperatures up to 300oC. An increase of specific on-resistance by 35% observed at 300oC, when compared to the value at room temperature. This is due to a negative shift in MOS threshold voltage, which decreases the MOS channel resistance at elevated temperatures. This effect cancels out the increase in drift layer resistance due to a decrease in bulk electron mobility at elevated temperature, resulting in a temperature stable on-resistance. The device operation at temperatures up to 300 oC and high speed switching results are also reported in this paper.

Keywords

devicesmicroelectronicsdielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B13-04
Copyright
Copyright © Materials Research Society 2006

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References

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