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3D Heterogeneous Integration using MEMS Devices for RF Applications

Published online by Cambridge University Press:  11 July 2012

Fumihiko Nakazawa ,
Xiaoyu Mi ,
Takeaki Shimanouchi ,
Tadashi Nakatani ,
Takashi Katsuki ,
Hiroaki Inoue ,
Osamu Toyoda  and
Satoshi Ueda
Fumihiko Nakazawa
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
Xiaoyu Mi
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
Takeaki Shimanouchi
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
Tadashi Nakatani
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
Takashi Katsuki
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
Hiroaki Inoue
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
Osamu Toyoda
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
Satoshi Ueda
Affiliation:
3D-Integration Technology Research Department, Association of Super-Advanced Electronics Technologies, 64, Nishiwaki, Ohkubo-cho, Akashi, Japan Device & Materials Laboratories Fujitsu Laboratories 64, Nishiwaki, Ohkubo-cho, Akashi, Japan
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Abstract

This paper presents novel 3D heterogeneous integrations using MEMS Devices for RF applications. We propose a 3D heterogeneous integration method that combines the advantages of LTCC, passive integration, and MEMS technologies. The basic concept is to form a large-size LTCC wiring wafer and then to form high-Q passives or MEMS filters directly on the wafer surface. Other functional devices such as ICs, SAWs, and MEMS switches are mounted above the surface-formed devices. A miniaturized duplexer consisted of IPD, SAW, and film bulk acoustic resonator (FBAR); and a next generation duplexer module consisted of an MEMS tunable filter and a piezoelectric transducer (PZT)-actuated RF MEMS switch were constructed to demonstrate its feasibility and effectiveness.

Keywords

ceramicmicroelectro-mechanical (MEMS)thin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1427: Symposium B – Heterogeneous Integration Challenges of MEMS, Sensor and CMOS LSI , 2012 , mrss12-1427-b01-05
Copyright
Copyright © Materials Research Society 2012

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References

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