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3C-SiC Monocrystals Grown on Undulant Si(001) Substrates

Published online by Cambridge University Press:  11 February 2011

Hiroyuki Nagasawa ,
Kuniaki Yagi ,
Takamitsu Kawahara  and
Naoki Hatta
Hiroyuki Nagasawa
Affiliation:
Hoya Advanced Semiconductor Technologies Co., Ltd. 1–17–16 Tanashioda, Sagamihara, Kanagawa 229–1125, Japan
Kuniaki Yagi
Affiliation:
Hoya Advanced Semiconductor Technologies Co., Ltd. 1–17–16 Tanashioda, Sagamihara, Kanagawa 229–1125, Japan
Takamitsu Kawahara
Affiliation:
Hoya Advanced Semiconductor Technologies Co., Ltd. 1–17–16 Tanashioda, Sagamihara, Kanagawa 229–1125, Japan
Naoki Hatta
Affiliation:
Hoya Advanced Semiconductor Technologies Co., Ltd. 1–17–16 Tanashioda, Sagamihara, Kanagawa 229–1125, Japan
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Abstract

A novel technique to reduce planar defects in 3C-SiC is to grow it on “undulant-Si” substrates, on which the surface forms countered slopes oriented in the [110] and [110] directions. In the initial stage of 3C-SiC growth, step flow epitaxy occurs on each slope of the substrate, reducing the anti-phase boundaries. Then, the stacking faults in the (111) and (111) planes are gradually annihilated by combining with counter-stacking faults, while those parallel to (111) and (111) vanish. The freestanding 3C-SiC exhibits anisotropy in its electrical properties. The origin of the anisotropy in electrical properties is discussed by referring to the results of X-ray diffraction study.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K1.6
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Nelson, W.E., Halden, F.A. and Rosengreen, A., J. Appl. Phys. 37, 333 (1966).Google Scholar
2. Long, N.N., Nedzvetskii, D.S., Prokofeva, N.K. and Riefman, M.B., Opt. Spectrosc. 29, 388 (1970).Google Scholar
3. Pensl, G., Bassler, M., Ciobanu, F., Afanas'ev, V., Yano, H., Kimoto, T. and Matsunami, H., Mat. Res. Soc. Symp. Proc. 640, H3.2 (2001).Google Scholar
4. Nagasawa, H. and Yagi, K., Phys. Stat. Sol.(b) 202, 335 (1997).Google Scholar
5. Fleischman, A.J., Zorman, C.A., Mehregany, M., Jacob, C., Nishino, S. and Pirouz, P., Inst. Phys. Conf. Ser. No. 142, 197 (Paper presented at Silicon Carbide and Related Materials 1995 Conf., Kyoto, Japan).Google Scholar
6. Iwata, H., Lindefelt, U., Oberg, S., Briddon, P., Mater. Sci. Forum, 389–393, 439 (2002).Google Scholar
7. Irokawa, Y., Kodama, M. and Kachi, T., J. Electrochem. Soc. 148, G680 (2001).Google Scholar
8. Kordina, O., Bjorketun, L.-O., Henry, A., Hallin, C., Glass, R.C., Hultman, L., Sundgren, J.-E. and Janzen, E., J. Cryst. Growth 154, 303 (1995).Google Scholar
9. Jayatirtha, H.N., Spencer, M.G., Taylor, C., Greg, W., J. Cryst. Growth, 174, 662 (1997).Google Scholar
10. Lambrecht, W. and Segall, B., Phys. Rev. B41, 2948 (1990).Google Scholar
11. Shibahara, K., Nishino, S. and Matsunami, H., J. Cryst. Growth, 78, 538 (1986).Google Scholar
12. Nagasawa, H., Yagi, K. and Kawahara, T., J. Cryst. Growth, 237–239, 1244 (2002).Google Scholar
13. Iwata, H., Lindefelt, U., Oberq, S. and Briddon, P.R., Presented at ECSCRM2002 Linkoping, Sweden, 2002 (to be published in Matr. Sci. Forum, 2003).Google Scholar
14. Hatta, N., Yagi, K., Kawahara, T. and Nagasawa, H., Presented at ECSCRM2002 Linkoping, Sweden, 2002 (to be published in Matr. Sci. Forum, 2003).Google Scholar
15. Nagasawa, H., Kawahara, T., Yagi, K., Matr. Sci. Forum, 389–393, 319 (2002).Google Scholar