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1MeV electron irradiation effects of GaAs/Si solar cells

Published online by Cambridge University Press:  01 February 2011

N. Chandrasekaran ,
T. Soga ,
Y. Inuzuka ,
M. Imaizumi ,
H. Taguchi  and
T. Jimbo
N. Chandrasekaran
Affiliation:
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466–8555, Japan.
T. Soga
Affiliation:
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466–8555, Japan.
Y. Inuzuka
Affiliation:
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466–8555, Japan.
M. Imaizumi
Affiliation:
Japan Aerospace Exploration Agency, Tsukuba, 305–8505, Japan.
H. Taguchi
Affiliation:
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466–8555, Japan.
T. Jimbo
Affiliation:
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466–8555, Japan.
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Abstract

The characteristics of 1 MeV electron irradiated GaAs solar cells grown on GaAs and Si substrates are studied under dark and AM 0 conditions. The short circuit currents (Isc) for GaAs/GaAs cell and GaAs/Si cell have been decreased at higher fluences. The degradation rate of Voc and Pmax for GaAs/Si is slower than that of GaAs/GaAs at the fluence 1×1016 cm−2. This is due to the high radiation resistance of saturation current. It has been due to slow generation of arsnic vacancies related defect (VAs) in the GaAs/Si solar cell, which is determined by photoluminescence analyses and deep level transient spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L6.7
Copyright
Copyright © Materials Research Society 2005

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References

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