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1.37 - 2.90 Micron Intersubband Transitions in GaN/AlN Superlattices

Published online by Cambridge University Press:  01 February 2011

Eric Anthony DeCuir Jr. ,
Emil Fred ,
Omar Manasreh ,
Jinqiao Xie ,
Hadis Morkoc ,
Esther Baumann  and
Daniel Hofstetter
Eric Anthony DeCuir Jr.
Affiliation:
[email protected], University of Arkansas, Electrical Engineering and Microelectronics and Photonics, 3217 Bell Engineering Center, Fayetteville, AR, 72701, United States
Emil Fred
Affiliation:
[email protected], University of Arkansas, Department of Electrical Engineering, 3217 Bell Engineering Center, Fayetteville, AR, 72701, United States
Omar Manasreh
Affiliation:
[email protected], University of Arkansas, Department of Electrical Engineering, 3217 Bell Engineering Center, Fayetteville, AR, 72701, United States
Jinqiao Xie
Affiliation:
[email protected], Virginia Commonwealth University, Department of Electrical Engineering and Physics Department, Richmond, VA, 23284, United States
Hadis Morkoc
Affiliation:
[email protected], Virginia Commonwealth University, Department of Electrical Engineering and Physics Department, Richmond, VA, 23284, United States
Esther Baumann
Affiliation:
[email protected], University of Neuchatel, Institute of Physics, A.-L Breguet, Neuchatel, 2000, Switzerland
Daniel Hofstetter
Affiliation:
[email protected], University of Neuchatel, Institute of Physics, A.-L Breguet, Neuchatel, 2000, Switzerland
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Abstract

Intersubband transitions in the spectral range of 1.37-2.90 °Cm is observed in molecular beam epitaxy grown Si-doped GaN/AlN multiple quantum wells using a Fourier-transform spectroscopy technique. A blue shift in the peak position of the intersubband transition is observed as the well width is decreased. A sample with a well width in the order of 2.4 nm exhibited the presence of three bound states in the GaN well. The bound state energy levels are calculated using a transfer matrix method. An electrochemical capacitance voltage technique is used to obtain the three dimensional carrier concentrations in these samples which further enable the calculation of the Fermi energy level position. Devices fabricated from these GaN/AlN quantum wells are found to operate in the photovoltaic mode.

Keywords

absorptionoptical propertiesIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I13-01
Copyright
Copyright © Materials Research Society 2007

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References

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