Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-02T22:04:34.408Z Has data issue: false hasContentIssue false
  • English
  • Français

The 1280 Cm−1 Absorption Line in Amorphous Hydrogenated Boron Carbide

Published online by Cambridge University Press:  10 February 2011

Shu-Han Lin  and
Bernard J. Feldman
Shu-Han Lin
Affiliation:
Department of Physics and the Center for Molecular Electronics, University of Missouri, St. Louis, MO 63121, [email protected]
Bernard J. Feldman
Affiliation:
Department of Physics and the Center for Molecular Electronics, University of Missouri, St. Louis, MO 63121, [email protected]
Get access

Abstract

We report infrared absorption measurements that provide evidence for the presence of boron carbide icosahedra in amorphous hydrogenated boron carbide thin films. The infrared absorption spectra is dominated by an intense line at 1280 cm-1 with a FWHM of ≃320 cm-1. Similar lines have been previously reported in polycrystalline boron carbide, where boron carbide icosahedra make up the unit cell. In both systems, the linewidth narrows and the peak position shifts to higher energy with increasing carbon concentrations. From annealing studies of amorphous hydrogenated boron carbide, hydrogen plays a very small role in the 1280 cm-1 line. Finally, the integrated intensity of the 1280 cm-1 line is a sublinear function of the boron concentration, providing further evidence that the carbon concentration in these icosahedra increases as the carbon concentration of the film increases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 517: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , January 1998 , 433
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Brown, D. W., Daniels, B. K., Kimoch, F. W., Knapp, B. J. and Petrmichl, R. H., 1995 Spring Materials Research Society Meeting Abstracts, p. 191.Google Scholar
2. Lin, S.-H., Feldman, B. J. and Li, D., Appl. Phys. Lett. 69, 2373 (1996).Google Scholar
3. Veprek, S., Plasma Chemistry and Plasma Processing 12, 219 (1992).10.1007/BF01447023Google Scholar
4. Veprek, S. and Jurik-Rajman, M., in Proc. 7th Int. Symp. on Plasma Chemistry, (Eindhoven, 1985) p. 90.Google Scholar
5. Onate, J., Garcia, A., Bellido, V. and Viviente, J., Surf. Coat. Technol. 49, 548 (1991).Google Scholar
6. Lee, S. and Dowben, P. A., Appl. Phys. A 58, 223 (1994).Google Scholar
7. Erdemir, A., Bindal, C. and Fenske, G. R., Appl. Phys. Lett. 68, 1637 (1996).Google Scholar
8. Lee, S., Mazurowski, J., Ramsmeyer, G. and Dowben, P. A., J. Appl. Phys. 72, 4925 (1992).10.1063/1.352060Google Scholar
9. Way, B. M., Dahn, J. R., Tiedje, T., Myrtle, K., and Kasrai, M., Phys. Rev. B 46, 1697 (1992).Google Scholar
10. Sylvester, B., Lin, S.-H. and Feldman, B. J., Solid State Comm. 93, 969 (1995).Google Scholar
11. Wagner, V., Dekempeneer, E. H. A., Geurts, J., van IJzendoorn, L. J., Sporken, R. and Caudano, R., in Thin Films: Stresess and Mechanical Properties VI, (Mater. Res. Soc. Proc. 436, Pittsburgh, PA, 1997) p. 183.Google Scholar
12. Shirai, K., Emura, S., Gonda, S. and Kumashiro, Y., J. Appl. Phys. 78, 3392 (1995).Google Scholar
13. Braddock-Wilking, J., Lin, S.-H. and Feldman, Bernard J., Tribology Letters, in press.Google Scholar
14. Stein, H., Aselage, T. and Emin, D., in Boron-Rich Solids, Proceedings of the 10th International Conference on Boron, Borides and Related Compounds, (AIP Conf. Proc. 231, New York, NY, 1991) p. 322.Google Scholar