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Electrical and optical characteristics of solution-processed MoOx and ZnO QDs heterojunction

Published online by Cambridge University Press:  10 August 2017

Hemant Kumar Open the ORCID record for Hemant Kumar [Opens in a new window] ,
Yogesh Kumar ,
Gopal Rawat ,
Chandan Kumar ,
Bratindranath Mukherjee ,
Bhola N. Pal  and
Satyabrata Jit
Hemant Kumar*
Affiliation:
Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India
Yogesh Kumar
Affiliation:
Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India
Gopal Rawat
Affiliation:
Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India
Chandan Kumar
Affiliation:
Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India
Bratindranath Mukherjee
Affiliation:
Department of Metallurgical Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India
Bhola N. Pal
Affiliation:
School of Material Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India
Satyabrata Jit*
Affiliation:
Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India
*
Address all correspondence to Hemant Kumar, Satyabrata Jit at hkumar.rs.ece13@iitbhu.ac.in, sjit.ece@iitbhu.ac.in
Address all correspondence to Hemant Kumar, Satyabrata Jit at hkumar.rs.ece13@iitbhu.ac.in, sjit.ece@iitbhu.ac.in
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Abstract

In this work, effects of heat treatment on the heterojunction between MoOx and ZnO quantum dots (QDs) are analyzed possibly for the first time. Solution-processed and thermal deposition technique is used for the growth of MoOx over the ZnO QDs and compared for the electrical analysis. The absorption and photoluminescence properties of ZnO QDs and MoOx have been analyzed for the optical behavior. Further, the heat-treated heterojunctions are analyzed for built-in potential (0.25 V), carrier density (~2.9 × 1018 cm−3), and responsivity (3.93 mAW−1). The heterojunction of solution-processed MoOx and ZnO QDs shows better stability after heat treatment compared with other devices.

Type
Research Letters
Information
MRS Communications , Volume 7 , Issue 3 , September 2017 , pp. 607 - 612
Copyright
Copyright © Materials Research Society 2017 

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