Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-25T19:26:44.407Z Has data issue: false hasContentIssue false
  • English
  • Français

Total-Reflection X-Ray Fluorescence Spectroscopy for In Situ, Real-Time Analysis of Growing Films

Published online by Cambridge University Press:  29 November 2013

T.A. Roberts  and
K.E. Gray
Get access

Extract

For many thin-film applications it is useful or necessary to accurately monitor and control the film's physical properties. Particularly important are composition and structure, which determine most of the material's properties. Examples include the semiconducting properties of SixGe1−x, the ferroelectric properties of BaTiO, and the superconducting properties of Bi2Sr2CaCu2Oy, all of which depend strongly on composition. The development of in situ analyses not only provides the possibility of feedback control during deposition, but also assists in a more efficient evaluation of the best processing conditions to achieve particular properties. Control of the film structure and composition during film growth has not been easy, and in situ analyses during film nucleation and growth has been a goal of many investigators.

Our interest in in situ monitoring of film deposition was motivated by sputter growth of Bi2Sr2CaCu2Oy from a composite target. These studies found that the film composition was a strong function of deposition parameters, particularly the substrate temperature. Investigating these complex relationships required the growth and ex situ analysis of many films. It was clear that a technique to determine the composition of films during growth could efficiently unravel the complex relationships between composition and processing parameters.

An important consideration for an in situ analysis technique is that it not interfere with the growth process either by altering the film surface or by changing the deposition dynamics. During deposition, the substrate temperature, gas flow, and deposition rate all must be maintained; any interruptions for the analysis may alter the growth irreversibly.

Type
In Situ, Real-Time Characterization of Thin-Film Growth Processes
Information
MRS Bulletin , Volume 20 , Issue 5 , May 1995 , pp. 43 - 46
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Chalmers, S.A. and Killeen, K.P., Appl. Phys. Lett. 63 (1993) p. 3,131.CrossRefGoogle Scholar
2.Grace, J.M., McDonald, D.B., Reiten, M.T., Olson, J., Kampwirth, R.T., and Gray, K.E., J. Appl. Phys. 70 (1991) p. 3,867.CrossRefGoogle Scholar
3.Lin, Y., Krauss, A.R., Auciello, O., Nishino, Y., Gruen, D.M., Chang, R.P.H., and Schultz, J. A., J. Vac. Sci. Technol. A12 (1994) p. 1,557.CrossRefGoogle Scholar
4.Beno, M.A. and Knapp, G.S., Rev. Sci. Instrum. 64 (1993) p. 2,201.CrossRefGoogle Scholar
5.Selinder, T.I., Roberts, T.A., Miller, D.J., Beno, M.A., Knapp, K.E., Ogawa, S., Fair, J.A., and Fraser, D.B., private communication.Google Scholar
6.Parratt, L.G., Phys. Rev. 95 (1954) p. 359.CrossRefGoogle Scholar
7.Becker, R.S., Golovchenko, J.A., and Patel, J.R., Phys. Rev. Lett. 50 (1983) p. 153.CrossRefGoogle Scholar
8.Bloch, J.M., Sansone, M., Rondelez, F., Peiffer, D.G., Pincus, P., Kim, M.W., and Eisenberger, P.M., Phys. Rev. Lett. 54 (1985) p. 1,039.CrossRefGoogle Scholar
9.de Boer, D.K.G., Phys. Rev. B 44 (1991) p. 498.CrossRefGoogle Scholar
10.Yun, W.B., and Bloch, J.M., J. Appl. Phys. 68 (1990) p. 1,421.CrossRefGoogle Scholar
11.Messiah, A., Quantum Mechanics 2 (New York, Wiley, 1962) p. 288.Google Scholar
12.Kampwirth, R.T., Grace, J.M., Miller, D.J., McDonald, D.B., Gray, K.E., Anderson, P.H., Driehuys, B., Reiten, M., and Ascolese, M., in Proc. 2nd CO Conf. on Sci. and Technol. of Thin Film Supercon., edited by McConnell, R.D. and Noufi, R. (Plenum, New York, 1990) p. 39.Google Scholar
13.Dass, M.L.A., Fraser, D.B., and Wei, C.S., Appl. Phys Lett. 58 (1991) p. 1,308.CrossRefGoogle Scholar
14.Vantomme, A., Nicolet, M.A., and Theodore, N.D., J. Appl. Phys. 75 (1994) p. 3,882.CrossRefGoogle Scholar
15.Hsia, S.L., Tan, T.Y., Smith, P., and McGuire, G.E., J. Appl. Phys. 72 (1992) p. 1,864.CrossRefGoogle Scholar