Theoretical Calculations Predict that H+ Causes Direct Depassivation of Si–H Bonds

Mathew M. Maye

doi:10.1557/mrs2001.263

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Theoretical Calculations Predict that H+ Causes Direct Depassivation of Si–H Bonds

Published online by Cambridge University Press: 03 May 2012

Mathew M. Maye

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Type: Research/Researchers
Information: MRS Bulletin , Volume 26 , Issue 12: New Aspects in Nanocrystal Research , December 2001 , pp. 966 - 967

DOI: https://doi.org/10.1557/mrs2001.263 [Opens in a new window]
Copyright: Copyright © Materials Research Society 2001

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Theoretical Calculations Predict that H+ Causes Direct Depassivation of Si–H Bonds

Volume 26, Issue 12
Mathew M. Maye
DOI: https://doi.org/10.1557/mrs2001.263

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Theoretical Calculations Predict that H+ Causes Direct Depassivation of Si–H Bonds

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