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Stresses in Multilayered Thin Films

Published online by Cambridge University Press:  29 November 2013

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Almost all thin films deposited on a substrate are in a state of stress. Fifty years ago pioneering work concerning the measurement of thin-film stresses was conducted by Brenner and Senderoff. They electroplated a metal film onto a thin metal substrate strip fixed at one end and measured the deflection of the free end of the substrate with a micrometer. Using a beam-bending analysis, they were able to calculate a residual stress from the measured deflection of the bimetallic film-substrate system. A variety of other, more sensitive methods of measuring the curvature of the surface of a film-substrate system have since been developed using, for example, capacitance measurements and interferometry techniques.

When a monochromatic x-ray beam is incident onto a curved single crystal, the diffraction condition is satisfied only for regions of the crystal where the inclination angle with respect to the incident beam exactly matches the Bragg angle. When a parallel beam plane-wave source is used, the diffracted beam from a particular set of (hkl) planes gives rise to a single narrow-contour band. If the crystal is rocked by an angle ω, the contour band will move by a certain distance D. The radius of curvature R of the crystal lattice planes is given by

where θ is the Bragg angle. Equal rocking angles produce equivalent D values for uniform curvature, or varied D values for nonuniform curvature. Using this procedure, detailed contour maps of the angular displacement field of the crystal can be mapped in two dimensions.

Type
Mechanical Behavior of Nanostructured Materials
Copyright
Copyright © Materials Research Society 1999

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