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Silicon in All its Forms

Published online by Cambridge University Press:  31 January 2011

Jim Chelikowsky
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Abstract

The following article is based on an edited transcript of the Turnbull Lecture presented by Jim Chelikowsky (University of Minnesota), recipient of the 2001 Materials Research Society David Turnbull Lectureship, at the 2001 MRS Fall Meeting on November 27 in Boston. Chelikowsky was cited for “contributions to the fundamental understanding of electronic, optical, mechanical, surface, and interface properties of bulk and nanostructured semiconductors, ceramics, and metals through ab initio calculations; and for excellence in teaching, lecturing, and writing.”

Keywords

electronic structurepseudopotential calculationssemiconductorssilicon.
Type
Research Article
Information
MRS Bulletin , Volume 27 , Issue 12 , December 2002 , pp. 951 - 960
Copyright
Copyright © Materials Research Society 2002

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References

1. See the following Web sites: PBS, “The First Silicon Transistor,” http://www.pbs.org/transistor/science/events/silicont1.html (accessed September 2002); and Texas Instruments, “History of Innovation,” http://www.ti.com/corp/docs/company/history/sitrans.shtml (accessed September 2002).Google Scholar
2. See the Web site at Intel on “Moore's Law,” http://www.intel.com/research/silicon/mooreslaw.htm (accessed September 2002), and on “Silicon Showcase: Breaking Barriers to Moore's Law,” http://www.intel.com/research/silicon/ (accessed September 2002).Google Scholar
3. IEE/INSPEC science and engineering database home page, www.iee.org/publish/inspec/ (accessed September 2002).Google Scholar
4.Dirac, P.A.M., Proc. R. Soc. London 123 (1929) p. 714.Google Scholar
5.Born, M. and Oppenheimer, J.R., Ann. Phys. 84 (1927) p. 457.CrossRefGoogle Scholar
6.Hartree, D.R., The Calculation of Atomic Structures (John Wiley & Sons, New York, 1957).Google Scholar
7. One of the first applications of the pseudopotential concept comes from Fermi, E., Nuovo Cimento 11 (1934) p. 157.CrossRefGoogle Scholar
8.Phillips, J.C. and Kleinman, L., Phys. Rev. 116 (1959) p. 287.CrossRefGoogle Scholar
9.Cohen, M.L. and Chelikowsky, J.R., in Handbook on Semiconductors, Vol. 1, edited by Paul, W. (North-Holland, New York, 1982) p. 219.Google Scholar
10.Chelikowsky, J.R. and Cohen, M.L., in Handbook on Semiconductors, Vol. 1, edited by Landsberg, P. (Elsevier, Amsterdam, 1992) p. 59.Google Scholar
11.Cohen, M.L. and Chelikowsky, J.R., Electronic Structure and Optical Properties of Semiconductors, 2nd ed. (Springer-Verlag, Berlin, 1989).CrossRefGoogle Scholar
12.Cohen, M.L. and Bergstresser, T.K., Phys. Rev. 141 (1966) p. 789.CrossRefGoogle Scholar
13.Chelikowsky, J.R. and Cohen, M.L., Phys. Rev. B 10 (1974) p. 5095; Phys. Rev. B 14 (1976) p. 556.CrossRefGoogle Scholar
14.Zucca, R.R.L. and Shen, Y.R., Phys. Rev. B 1 (1970) p. 2668.CrossRefGoogle Scholar
15.Ley, L., Kowalczyk, S., Pollak, R.A., and Shirley, D., Phys. Rev. Lett. 29 (1972) p. 1088.CrossRefGoogle Scholar
16.Chelikowsky, J.R. and Binggeli, N., Comput. Mater. Sci. 2 (1994) p. 111.CrossRefGoogle Scholar
17.Yang, L.W. and Coppens, P., Solid State Commun. 15 (1974) p. 1555.CrossRefGoogle Scholar
18.Pickett, W.E., Comput. Phys. Rep. 9 (1989) p. 115.CrossRefGoogle Scholar
19.Chelikowsky, J.R., J. Phys. D 33 (2000) p. R33.CrossRefGoogle Scholar
20.Hohenberg, P. and Kohn, W., Phys. Rev. 136 (1964) p. B864.CrossRefGoogle Scholar
21.Kohn, W. and Sham, L., Phys. Rev. 140 (1965) p. A1133.CrossRefGoogle Scholar
22.Schlüter, M., Chelikowsky, J.R., Louie, S.G., and Cohen, M.L., Phys. Rev. B 12 (1975) p. 4200.CrossRefGoogle Scholar
23.Chelikowsky, J.R. and Louie, S.G., eds., Quantum Theory of Real Materials (Kluwer Academic Publishers, Boston, 1996).CrossRefGoogle Scholar
24.Yin, M.T. and Cohen, M.L., Phys. Rev. Lett. 45 (1980) p. 1004.CrossRefGoogle Scholar
25.Chang, K.J., Dacorogna, M.M., Cohen, M.L., Mignot, J.M., Chouteau, G., and Martinez, G., Phys. Rev. Lett. 54 (1985) p. 2375.Google Scholar
26.Perdew, J.P., Burke, K., and Wang, Y., Phys. Rev. B 54 (1996) p. 16533.CrossRefGoogle Scholar
27.Stich, I., Car, R., and Parrinello, M., Phys. Rev. B 44 (1991) p. 4262.CrossRefGoogle Scholar
28.Chelikowsky, J.R. and Binggeli, N., Solid State Commun. 88 (1993) p. 381.CrossRefGoogle Scholar
29.Binggeli, N. and Chelikowsky, J.R., Phys. Rev. B 50 (1994) p. 11764.CrossRefGoogle Scholar
30.Binggeli, N. and Chelikowsky, J.R., Phys. Rev. Lett. 75 (1995) p. 493.CrossRefGoogle Scholar
31.Kronik, L., Fromherz, R., Ko, E., Ganteför, G., and Chelikowsky, J.R., Nature: Materials (2002) in press.Google Scholar
32.Furukawa, S. and Miyasato, T., Phys. Rev. B 38 (1988) p. 5726.CrossRefGoogle Scholar
33.Casida, M.E., in Recent Advances in Density-Functional Methods, Part I, edited by Chong, D.P. (World Scientific, Singapore, 1995) p. 155.Google Scholar
34.Vasiliev, I., Ogut, S., and Chelikowsky, J.R., Phys. Rev. Lett. 86 (2001) p. 1813.CrossRefGoogle Scholar
35.Itoh, U., Toyoshima, Y., Onuki, H., Washida, N., and Ibuki, T., J. Chem. Phys. 85 (1986) p. 4867.CrossRefGoogle Scholar
36. See “Einstein Links” on the PBS Web site, http://www.pbs.org/wgbh/nova/einstein/links.html (accessed September 2002).Google Scholar