Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-02T22:18:14.324Z Has data issue: false hasContentIssue false
  • English
  • Français

SiC MESFETs for High-Frequency Applications

Published online by Cambridge University Press:  31 January 2011

S. Sriram ,
A. Ward ,
J. Henning  and
S. T. Allen
Get access

Abstract

Significant progress has been made in the development of SiC metal semiconductor field-effect transistors (MESFETs) and monolithic microwave integrated-circuit (MMIC) power amplifiers for high-frequency power applications. Three-inch-diameter high-purity semi-insulating 4H-SiC substrates have been used in this development, enabling high-volume fabrication with improved performance by minimizing surface- and substrate-related trapping issues previously observed in MESFETs. These devices exhibit excellent reliability characteristics, with mean time to failure in excess of 500 h at a junction temperature of 410°C. A sampling of these devices has also been running for over 5000 h in an rf high-temperature operating-life test, with negligible changes in performance. High-power SiC MMIC amplifiers have also been demonstrated with excellent yield and repeatability. These MMIC amplifiers show power performance characteristics not previously available with conventional GaAs technology. These developments have led to the commercial availability of SiC rf power MESFETs and to the release of a foundry process for MMIC fabrication.

Keywords

MESFETsMMICsreliabilityrf powersilicon carbidetrapping
Type
Research Article
Information
MRS Bulletin , Volume 30 , Issue 4: Advances in Silicon Carbide Electronics , April 2005 , pp. 308 - 311
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Noblanc, O., Arnodo, C., Dua, C., Chartier, E., and Brylinski, C., Mater. Sci. Forum 338–342 (2000) p.1247.Google Scholar
2.Sghaier, N., Bluet, J.M., Souifi, A., Guillot, G., Morvan, E., and Brylinski, C., IEEE Trans. Electron Devices 50 (2003) p. 297.CrossRefGoogle Scholar
3.Hilton, K.P., Uren, M.J., Hayes, D.G., Johnson, H.K., and Wilding, P.J., Mater. Sci. Forum 389–393 (2002) p. 1387.CrossRefGoogle Scholar
4.Cha, H.-Y., Thomas, C.I., Koley, G., Eastman, L.F., and Spencer, M.G., IEEE Trans. Electron Devices 50 (2003) p. 1569.Google Scholar
5.Henry, H.G., Augustine, G., DeSalvo, G.C., Brooks, R.C., Barron, R.R., Oliver, J.D., Morse, A.W., Veasel, B.W., Esker, P.M., and Clarke, R.C., IEEE Trans. Electron Devices 51 (2004) p. 839.CrossRefGoogle Scholar
6.Sriram, S., Ward, A., Janke, C., Alcorn, T., Hagleitner, H., Wieber, K., Jenny, J., Sumakeris, J., and Allen, S., Mater. Sci. Forum 457–460 (2004) p. 1205.CrossRefGoogle Scholar
7.Ware, A., Allen, S.T., and Palmour, J., to be presented at the 2005 Int. Conf. on Compound Semiconductor Manufacturing Technology (GaAs Mantech Conf.), April 11–12, 2005, New Orleans, LA.Google Scholar