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SiC Bipolar Power Devices

Published online by Cambridge University Press:  31 January 2011

T. Paul Chow
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Abstract

The successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.

Keywords

bipolar power devicespower rectifierspower thyristorspower transistorssilicon carbide.
Type
Research Article
Information
MRS Bulletin , Volume 30 , Issue 4: Advances in Silicon Carbide Electronics , April 2005 , pp. 299 - 304
Copyright
Copyright © Materials Research Society 2005

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