Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-26T16:38:50.740Z Has data issue: false hasContentIssue false
  • English
  • Français

The Semiconductor p–n Junction “Ultimate Lamp”

Published online by Cambridge University Press:  31 January 2011

Nick Holonyak Jr.
Get access

Abstract

Simple diagrams are used to show the transformation of a thin sample of intrinsic, direct-gap semiconductor from an ideal “flat-band” photopumped recombination-radiation light source into a current-driven, p–n junction “ultimate lamp,” a light-emitting diode.

Keywords

p–n junctionsLEDslight-emitting diodes
Type
Research Article
Information
MRS Bulletin , Volume 30 , Issue 7 , July 2005 , pp. 515 - 517
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Bardeen, J. and Brattain, W.H., Phys. Rev. 74 (1948) p. 230.Google Scholar
2.Bardeen, J. and Brattain, W.H., U.S. Patent 2,524,035 (October 3, 1950; filed June 17, 1948).Google Scholar
3.Holonyak, N. Jr., Am. J. Phys. 68 (2000) p. 864.CrossRefGoogle Scholar
4.Stillman, G.E., Sirkis, M.D., Rossi, J.A., Johnson, M.R., and Holonyak, N. Jr., Appl. Phys. Lett. 9 (1966) p. 268.CrossRefGoogle Scholar
5.Wolfe, C.M., Holonyak, N. Jr., and Stillman, G.E., Physical Properties of Semiconductors (Prentice Hall, Englewood Cliffs, N.J., 1989)Google Scholar